IRLR8743PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLR8743PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 135 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 35 nS
Cossⓘ - Capacitancia de salida: 950 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de IRLR8743PBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRLR8743PBF datasheet
..1. Size:369K international rectifier
irlu8743pbf irlr8743pbf.pdf 
PD - 96123 IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 3.1m 39nC Converters with Synchronous Rectification for Telecom and Industrial Use D l Lead-Free Benefits S S D l Very Low RDS(on) at 4.5V VGS G G l Ultra-Low Gate Impedance
..2. Size:380K international rectifier
irlr8743pbf irlu8743pbf.pdf
PD - 96123 IRLR8743PbF IRLU8743PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 3.1m 39nC Converters with Synchronous Rectification for Telecom and Industrial Use D l Lead-Free Benefits S S D l Very Low RDS(on) at 4.5V VGS G G l Ultra-Low Gate Impedance
6.1. Size:242K inchange semiconductor
irlr8743.pdf
isc N-Channel MOSFET Transistor IRLR8743, IIRLR8743 FEATURES Static drain-source on-resistance RDS(on) 3.1m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
8.1. Size:293K international rectifier
irlu8721pbf irlr8721pbf.pdf
IRLR8721PbF IRLU8721PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Synchronous Buck Converters for Computer Processor Power 30V 8.4m 8.5nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use l Lead-Free S S D G G Benefits D-Pak l Very Low RDS(on) at 4.5V VGS I-Pak IRLR8721PbF IRLU8721PbF
8.2. Size:277K international rectifier
irlr8715cpbf.pdf
PD - 97107A IRLR8715CPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 25V 9.4m 6.9nC Converters with Synchronous Rectification for Telecom D Benefits l Very Low RDS(on) at 4.5V VGS S l Ultra-Low Gate Impedance D G l Fully Characterized Avalanche Voltage and
8.3. Size:354K international rectifier
irlu8726pbf irlr8726pbf.pdf
PD - 97146A IRLR8726PbF IRLU8726PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ.) Converters for Computer Processor Power 30V 5.8m @VGS = 10V 15nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D D for Telecom and Industrial Use Benefits S l Very Low RDS(on) at 4.5V VGS S D D G l Ultra-Low Gate I
8.4. Size:259K international rectifier
irlr8721pbf-1.pdf
IRLR8721PbF-1 HEXFET Power MOSFET VDS 30 V D D RDS(on) max 8.4 m (@V = 10V) GS S G Qg (typical) 8.5 nC G ID 65 A D-Pak S (@T = 25 C) C IRLR8721PbF-1 Features Benefits Industry-standard pinout D-Pak Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Indu
8.5. Size:347K international rectifier
irlu8729pbf irlr8729pbf.pdf
PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 8.9m 10nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully C
8.6. Size:354K international rectifier
irlr8726pbf irlu8726pbf.pdf
PD - 97146A IRLR8726PbF IRLU8726PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg (typ.) Converters for Computer Processor Power 30V 5.8m @VGS = 10V 15nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D D for Telecom and Industrial Use Benefits S l Very Low RDS(on) at 4.5V VGS S D D G l Ultra-Low Gate I
8.7. Size:347K international rectifier
irlr8729pbf irlu8729pbf.pdf
PD - 97352B IRLR8729PbF IRLU8729PbF HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power 30V 8.9m 10nC l High Frequency Isolated DC-DC Converters with Synchronous Rectification D for Telecom and Industrial Use Benefits S S l Very Low RDS(on) at 4.5V VGS D G G l Ultra-Low Gate Impedance l Fully C
8.8. Size:232K international rectifier
irlr8729pbf-1.pdf
IRLR8729PbF-1 HEXFET Power MOSFET VDS 30 V D D RDS(on) max 8.9 m (@V = 10V) GS S Qg (typical) 10 nC G G ID 58 A D-Pak S (@T = 25 C) C IRLR8729PbF-1 Features Benefits Industry-standard pinout D-Pak and I-Pak Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier
8.9. Size:1635K cn vbsemi
irlr8729tr.pdf
IRLR8729TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSO
8.10. Size:243K inchange semiconductor
irlr8726.pdf
isc N-Channel MOSFET Transistor IRLR8726, IIRLR8726 FEATURES Static drain-source on-resistance RDS(on) 5.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
8.11. Size:243K inchange semiconductor
irlr8729.pdf
isc N-Channel MOSFET Transistor IRLR8729,IIRLR8729 FEATURES Static drain-source on-resistance RDS(on) 8.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fully characterized avalanche voltage and current ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai
8.12. Size:242K inchange semiconductor
irlr8721.pdf
isc N-Channel MOSFET Transistor IRLR8721, IIRLR8721 FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
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History: RU30120R
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