IRFM150 Todos los transistores

 ..1. Size:309K  international rectifier
 irfm150.pdf

 ..2. Size:23K  semelab
 2n7224 irfm150.pdf

2N7224 SEME IRFM150 LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL 13.59 (0.535) 6.32 (0.249) POWER MOSFET 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) VDSS 100V ID(cont) 34A RDS(on) 0.070 1 2 3 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED ALTERNATIVE TO TO-3 PACKAGE 0.89 (0.035) 1.14 (0

 9.1. Size:211K  international rectifier
 irfm140.pdf

 9.2. Size:263K  fairchild semi
 irfm110a.pdf

IRFM110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.289 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbo

 9.3. Size:267K  fairchild semi
 irfm120atf.pdf

IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum

 9.4. Size:269K  fairchild semi
 irfm120a.pdf

IRFM120A Advanced Power MOSFET IEEE802.3af Compatible FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area SOT-223 Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum

 9.5. Size:950K  samsung
 irfm110a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.289 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 9.6. Size:965K  samsung
 irfm120a.pdf

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V 2 Lower RDS(ON) 0.155 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 9.7. Size:414K  onsemi
 irfm120a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.8. Size:22K  semelab
 irfm1310st.pdf

IRFM1310ST MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 100V ID(cont) 34A RDS(on) 0.070 FEATURES REPETITIVE AVALANCHE RATING ISOLATED AND HERMETICALLY SEALED EASE OF PARALLELING TO 254Z Package SIMPLE DRIVE REQUIREMENTS Pin 1 Drain Pin 2 Sou

 9.9. Size:813K  cn vbsemi
 irfm120a.pdf

IRFM120A www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ABS