IRLU3114ZPBF Todos los transistores

 

IRLU3114ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRLU3114ZPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 42 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 650 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0049 Ohm
   Paquete / Cubierta: TO251
 

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IRLU3114ZPBF Datasheet (PDF)

 ..1. Size:315K  international rectifier
irlu3114zpbf irlr3114zpbf.pdf pdf_icon

IRLU3114ZPBF

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

 ..2. Size:315K  international rectifier
irlr3114zpbf irlu3114zpbf.pdf pdf_icon

IRLU3114ZPBF

PD - 97284AIRLR3114ZPbFIRLU3114ZPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating Temperature Fast SwitchingVDSS = 40V Repetitive Avalanche Allowed up to Tjmax Logic LevelGRDS(on) = 4.9mDescriptionThis HEXFET Power MOSFET utilizes the latest Sprocessing techniques to achieve extremely lowon-resistance

 5.1. Size:706K  infineon
auirlr3114z auirlu3114z.pdf pdf_icon

IRLU3114ZPBF

AUIRLR3114Z AUTOMOTIVE GRADE AUIRLU3114Z Features HEXFET Power MOSFET Advanced Process Technology VDSS 40V Ultra Low On-Resistance Logic Level Gate Drive RDS(on) typ. 4.9m 175C Operating Temperature max. 6.5m Fast Switching ID (Silicon Limited) 130A Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 42A L

 5.2. Size:261K  inchange semiconductor
irlu3114z.pdf pdf_icon

IRLU3114ZPBF

isc N-Channel MOSFET Transistor IRLU3114ZFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

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History: TK9A90E | SWF15N50DA | FDBL9406-F085 | MTB60A06Q8 | IPP015N04NG | IPN70R1K0CE | SRT10N070HD

 

 
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