IRLR3103PBF Todos los transistores

 ..1. Size:286K  international rectifier
 irlu3103pbf irlr3103pbf.pdf

PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

 ..2. Size:286K  international rectifier
 irlr3103pbf irlu3103pbf.pdf

PD - 95085A IRLR/U3103PbF HEXFET Power MOSFET l Logic-Level Gate Drive l Ultra Low On-Resistance D l Surface Mount (IRLR3103) VDSS = 30V l Straight Lead (IRLU3103) l Advanced Process Technology RDS(on) = 0.019 l Fast Switching G l Fully Avalanche Rated ID = 55A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

 6.1. Size:204K  international rectifier
 irlr3103.pdf

PD - 91333E IRLR/U3103 HEXFET Power MOSFET Logic-Level Gate Drive D Ultra Low On-Resistance VDSS = 30V Surface Mount (IRLR3103) Straight Lead (IRLU3103) RDS(on) = 0.019 Advanced Process Technology G Fast Switching ID = 55A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the

 6.2. Size:242K  inchange semiconductor
 irlr3103.pdf

isc N-Channel MOSFET Transistor IRLR3103, IIRLR3103 FEATURES Static drain-source on-resistance RDS(on) 19m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-

 7.1. Size:322K  international rectifier
 irlr3105pbf irlu3105pbf.pdf

PD - 95553B IRLR3105PbF IRLU3105PbF HEXFET Power MOSFET Features Logic-Level Gate Drive D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature Fast Switching RDS(on) = 0.037 G Repetitive Avalanche Allowed up to Tjmax Lead-Free ID = 25A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achie

 7.2. Size:185K  international rectifier
 irlr3105.pdf

PD - 94510B IRLR3105 AUTOMOTIVE MOSFET IRLU3105 HEXFET Power MOSFET Features D l Logic-Level Gate Drive VDSS = 55V l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 0.037 l 175 C Operating Temperature G l Fast Switching l Repetitive Avalanche Allowed up to Tjmax ID = 25A S Description Specifically designed for Automotive applications, this HEXFET Power

 7.3. Size:619K  international rectifier
 auirlr3105.pdf

PD - 97703A AUTOMOTIVE GRADE AUIRLR3105 Features HEXFET Power MOSFET l Advanced Planar Technology l Logic-Level Gate Drive D V(BR)DSS 55V Dynamic dV/dT Rating l Low On-Resistance RDS(on) typ. 30m l 175 C Operating Temperature G max 37m l Fast Switching l Fully Avalanche Rated S ID 25A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l A

 7.4. Size:796K  cn vbsemi
 irlr3105tr.pdf

IRLR3105TR www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 7.5. Size:241K  inchange semiconductor
 irlr3105.pdf

isc N-Channel MOSFET Transistor IRLR3105, IIRLR3105 FEATURES Static drain-source on-resistance RDS(on) 37m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-