IRLU024NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLU024NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 45 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 16 V
   Corriente continua de drenaje |Id|: 17 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 15 nC
   Tiempo de subida (tr): 74 nS
   Conductancia de drenaje-sustrato (Cd): 130 pF
   Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
   Paquete / Cubierta: TO251

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IRLU024NPBF Datasheet (PDF)

..1. Size:308K international rectifier
irlr024npbf irlu024npbf.pdf

PD- 95081AIRLR024NPbFIRLU024NPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Surface Mount (IRLR024N) VDSS = 55Vl Straight Lead (IRLU024N)l Advanced Process TechnologyRDS(on) = 0.065Gl Fast Switchingl Fully Avalanche RatedID = 17ASl Lead-FreeDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techni

..2. Size:308K infineon
irlr024npbf irlu024npbf.pdf

..3. Size:848K cn vbsemi
irlu024npbf.pdf

IRLU024NPBFwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secon

6.1. Size:162K 1
irlu024n.pdf

PD- 91363EIRLR024NIRLU024NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.065G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achieve the lowes

6.2. Size:490K international rectifier
auirlr024n auirlu024n.pdf

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

6.3. Size:260K inchange semiconductor
irlu024n.pdf

isc N-Channel MOSFET Transistor IRLU024NFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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