IRLR014NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95551BIRLR014NPbFIRLU014NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Surface Mount (IRLR024N)Dl Straight Lead (IRLU024N)VDSS = 55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.14l Fully Avalanche RatedGl Lead-FreeID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achiev

PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance

AUTOMOTIVE GRADEPD - 97740AUIRLR014N Advanced Planar Technology Logic-Level Gate DriveHEXFET Power MOSFET Low On-ResistanceD Dynamic dV/dT RatingV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) max.0.14G Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID 10AS Lead-Free, RoHS Compliant Auto

PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance

IRLR014NTRPwww.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters M