IRLR024PBF Todos los transistores

 ..1. Size:744K  international rectifier
 irlr024pbf irlu024pbf.pdf

PD- 96091 IRLR024PbF IRLU024PbF HEXFET Power MOSFET Lead-Free Description Absolute Maximum Ratings 08/01/06 Document Number 91322 www.vishay.com 1 IRLR/U024PbF Document Number 91322 www.vishay.com 2 IRLR/U024PbF Document Number 91322 www.vishay.com 3 IRLR/U024PbF Document Number 91322 www.vishay.com 4 IRLR/U024PbF Document Number 91322 www.vishay.com 5 IRLR

 7.1. Size:490K  international rectifier
 auirlr024n auirlu024n.pdf

AUIRLR024N AUTOMOTIVE GRADE AUIRLU024N Features HEXFET Power MOSFET Advanced Planar Technology Low On-Resistance VDSS 55V Logic-Level Gate Drive RDS(on) max. 0.065 Dynamic dv/dt Rating 175 C Operating Temperature ID 17A Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D Lead-Free, RoHS Com

 7.2. Size:168K  international rectifier
 irlr024.pdf

 7.3. Size:308K  international rectifier
 irlr024npbf irlu024npbf.pdf

PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) VDSS = 55V l Straight Lead (IRLU024N) l Advanced Process Technology RDS(on) = 0.065 G l Fast Switching l Fully Avalanche Rated ID = 17A S l Lead-Free Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techni

 7.4. Size:162K  international rectifier
 irlr024n.pdf

PD- 91363E IRLR024N IRLU024N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.065 G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowes

 7.5. Size:334K  international rectifier
 irlr024zpbf irlu024zpbf.pdf

PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET Power MOSFET Features n Logic Level D n Advanced Process Technology VDSS = 55V n Ultra Low On-Resistance n 175 C Operating Temperature RDS(on) = 58m n Fast Switching G n Repetitive Avalanche Allowed up to Tjmax n Lead-Free ID = 16A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve ext

 7.6. Size:312K  international rectifier
 auirlr024ntr.pdf

PD- 96348 AUTOMOTIVE GRADE AUIRLR024N AUIRLU024N Features Advanced Planar Technology HEXFET Power MOSFET Low On-Resistance D Logic-Level Gate Drive V(BR)DSS 55V Dynamic dV/dT Rating 175 C Operating Temperature RDS(on) max. 0.065 Fast Switching G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax S ID 17A Lead-Free, RoHS Compliant Automotive Qual

 7.7. Size:220K  samsung
 irlr024a.pdf

IRLR/U024A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.075 Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.061 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra

 7.8. Size:1198K  vishay
 irlr024 irlu024 sihlr024 sihlu024.pdf

IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Surface Mount (IRLR024/SiHLR024) RDS(on) ( )VGS = 5.0 V 0.10 RoHS* Straight Lead (IRLU024/SiHLU024) Qg (Max.) (nC) 18 COMPLIANT Available in Tape and Reel Qgs (nC) 4.5 Qgd (nC) 12 Logic-Level Gate Drive Configuration Single

 7.9. Size:717K  infineon
 auirlr024z auirlu024z.pdf

AUIRLR024Z AUTOMOTIVE GRADE AUIRLU024Z Features HEXFET Power MOSFET Logic Level VDSS 55V Advanced Process Technology Ultra Low On-Resistance RDS(on) typ. 46m 175 C Operating Temperature Fast Switching max. 58m Repetitive Avalanche Allowed up to Tjmax ID 16A Lead-Free, RoHS Compliant Automotive Qualified * D D De

 7.10. Size:962K  cn minos
 irlr024ntr.pdf

60V N-Channel Power MOSFET DESCRIPTION The IRLR024NTR uses advanced trench technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS VDS = 60V,ID= 30A Schematic diagram RDS(ON)

 7.11. Size:241K  inchange semiconductor
 irlr024n.pdf

isc N-Channel MOSFET Transistor IRLR024N, IIRLR024N FEATURES Static drain-source on-resistance RDS(on) 65m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-