IRLR024ZPBF Todos los transistores

 

IRLR024ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR024ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 35 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3 V

Tiempo de elevación (tr): 43 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.058 Ohm

Empaquetado / Estuche: TO252

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IRLR024ZPBF Datasheet (PDF)

1.1. irlr024zpbf irlu024zpbf.pdf Size:334K _international_rectifier

IRLR024ZPBF
IRLR024ZPBF

PD - 95773B IRLR024ZPbF IRLU024ZPbF HEXFET® Power MOSFET Features n Logic Level D n Advanced Process Technology VDSS = 55V n Ultra Low On-Resistance n 175°C Operating Temperature RDS(on) = 58mΩ n Fast Switching G n Repetitive Avalanche Allowed up to Tjmax n Lead-Free ID = 16A S Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ext

3.1. irlr024n.pdf Size:162K _international_rectifier

IRLR024ZPBF
IRLR024ZPBF

PD- 91363E IRLR024N IRLU024N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.065? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possi

3.2. irlr024npbf irlu024npbf.pdf Size:308K _international_rectifier

IRLR024ZPBF
IRLR024ZPBF

PD- 95081A IRLR024NPbF IRLU024NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Surface Mount (IRLR024N) VDSS = 55V l Straight Lead (IRLU024N) l Advanced Process Technology RDS(on) = 0.065Ω G l Fast Switching l Fully Avalanche Rated ID = 17A S l Lead-Free Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techni

 3.3. irlr024.pdf Size:168K _international_rectifier

IRLR024ZPBF
IRLR024ZPBF

3.4. irlr024pbf irlu024pbf.pdf Size:744K _international_rectifier

IRLR024ZPBF
IRLR024ZPBF

PD- 96091 IRLR024PbF IRLU024PbF HEXFET Power MOSFET Lead-Free Description Absolute Maximum Ratings 08/01/06 Document Number: 91322 www.vishay.com 1 IRLR/U024PbF Document Number: 91322 www.vishay.com 2 IRLR/U024PbF Document Number: 91322 www.vishay.com 3 IRLR/U024PbF Document Number: 91322 www.vishay.com 4 IRLR/U024PbF Document Number: 91322 www.vishay.com 5 IRLR/U024P

 3.5. irlr024a.pdf Size:220K _samsung

IRLR024ZPBF
IRLR024ZPBF

IRLR/U024A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.075 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 15 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.061 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings S

3.6. irlr024 irlu024 sihlr024 sihlu024.pdf Size:1198K _vishay

IRLR024ZPBF
IRLR024ZPBF

IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Surface Mount (IRLR024/SiHLR024) RDS(on) (?)VGS = 5.0 V 0.10 RoHS* Straight Lead (IRLU024/SiHLU024) Qg (Max.) (nC) 18 COMPLIANT Available in Tape and Reel Qgs (nC) 4.5 Qgd (nC) 12 Logic-Level Gate Drive Configuration Single RDS(on) Spe

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