IRLR110 Todos los transistores

 

IRLR110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR110

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 4.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Tiempo de elevación (tr): 47 nS

Conductancia de drenaje-sustrato (Cd): 80 pF

Resistencia drenaje-fuente RDS(on): 0.54 Ohm

Empaquetado / Estuche: TO252

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IRLR110 Datasheet (PDF)

1.1. irlr110a irlu110a.pdf Size:244K _upd

IRLR110
IRLR110

IRLR/U110A FEATURES BVDSS = 100 V ♦ Avalanche Rugged Technology RDS(on) = 0.44Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 4.7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK I-PAK ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 100V ♦ Lower RDS(ON): 0.336Ω (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings

1.2. irlr110 irlu110 irlr110pbf irlu110pbf.pdf Size:2150K _upd

IRLR110
IRLR110

IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition • Dynamic dV/dt Rating RDS(on) (Ω)VGS = 5.0 V 0.54 • Repetitive Avalanche Rated Qg (Max.) (nC) 6.1 • Surface Mount (IRLR110, SiHLR110) Qgs (nC) 2.0 • Straight Lead (IRLU110, SiHLU110) Qgd (nC) 3.3 • Available i

 1.3. irlr110pbf irlu110pbf.pdf Size:1177K _international_rectifier

IRLR110
IRLR110

PD - 95601A IRLR110PbF IRLU110PbF Lead-Free 1/10/05 Document Number: 91323 www.vishay.com 1 IRLR/U110PbF Document Number: 91323 www.vishay.com 2 IRLR/U110PbF Document Number: 91323 www.vishay.com 3 IRLR/U110PbF Document Number: 91323 www.vishay.com 4 IRLR/U110PbF Document Number: 91323 www.vishay.com 5 IRLR/U110PbF Document Number: 91323 www.vishay.com 6 IRLR/U110PbF

1.4. irlr110.pdf Size:175K _international_rectifier

IRLR110
IRLR110

 1.5. irlr110a.pdf Size:887K _samsung

IRLR110
IRLR110

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.44 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.6. irlr110 irlu110 sihlr110 sihlu110.pdf Size:2125K _vishay

IRLR110
IRLR110

IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 100 Definition Dynamic dV/dt Rating RDS(on) (?)VGS = 5.0 V 0.54 Repetitive Avalanche Rated Qg (Max.) (nC) 6.1 Surface Mount (IRLR110, SiHLR110) Qgs (nC) 2.0 Straight Lead (IRLU110, SiHLU110) Qgd (nC) 3.3 Available in Tape and Reel

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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