IRLS3813PBF Todos los transistores

 ..1. Size:488K  international rectifier
 irls3813pbf.pdf

IRLS3813PbF HEXFET Power MOSFET Application VDSS 30V Brushed motor drive applications D BLDC motor drive applications RDS(on) typ. 1.60m Battery powered circuits 1.95m max G Half-bridge and full-bridge topologies ID (Silicon Limited) 247A Synchronous rectifier applications S ID (Package Limited) 160A Resona

 6.1. Size:252K  inchange semiconductor
 irls3813.pdf

isc N-Channel MOSFET Transistor IRLS3813 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

 9.1. Size:372K  international rectifier
 irls3034pbf irlsl3034pbf.pdf

PD -97364A IRLS3034PbF IRLSL3034PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 40V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.4m l Uninterruptible Power Supply max. 1.7m l High Speed Power Switching G ID (Silicon Limited) 343A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Optimized for Logic

 9.2. Size:355K  international rectifier
 irls3036pbf irlsl3036pbf.pdf

PD -97358 IRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic

 9.3. Size:325K  international rectifier
 irls3034-7ppbf.pdf

PD - 97362 IRLS3034-7PPbF Applications HEXFET Power MOSFET l DC Motor Drive D l High Efficiency Synchronous Rectification in SMPS VDSS 40V l Uninterruptible Power Supply RDS(on) typ. 1.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits max. 1.4m G ID (Silicon Limited) 380A c Benefits l Optimized for Logic Level Drive ID (Package Limited)

 9.4. Size:307K  international rectifier
 irls3036-7ppbf.pdf

PD -97148A IRLS3036-7PPbF HEXFET Power MOSFET Applications D VDSS 60V l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.5m l Uninterruptible Power Supply max. 1.9m l High Speed Power Switching G ID (Silicon Limited) 300A c l Hard Switched and High Frequency Circuits ID (Package Limited) 240A S Benefits l Optimized for Logic Level

 9.5. Size:238K  international rectifier
 auirls3114z.pdf

PD - 96412 AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features VDSS 40V D l Advanced Process Technology RDS(on) typ. l Ultra Low On-Resistance 3.8m l Enhanced dV/dT and dI/dT capability max. 4.9m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 122A l Repetitive Avalanche Allowed up to Tjmax S ID (Wirebond Limited) 56A l Lead-Free, RoHS

 9.6. Size:288K  international rectifier
 auirls3036.pdf

AUTOMOTIVE GRADE AUIRLS3036 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.9m Logic Level Gate Drive Dynamic dv/dt Rating max. 2.4m G 175 C Operating Temperature ID (Silicon Limited) 270A Fast Switching ID (Package Limited) S 195A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant

 9.7. Size:688K  infineon
 auirls3036-7p.pdf

AUTOMOTIVE GRADE AUIRLS3036-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 1.5m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.9m 175 C Operating Temperature ID (Silicon Limited) 300A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

 9.8. Size:680K  infineon
 auirls3034.pdf

AUTOMOTIVE GRADE AUIRLS3034 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.4m Logic Level Gate Drive max. 1.7m Dynamic dv/dt Rating ID (Silicon Limited) 343A 175 C Operating Temperature Fast Switching ID (Package Limited) 195A Repetitive Avalanche Allowed up to Tjmax

 9.9. Size:699K  infineon
 auirls3034-7p.pdf

AUTOMOTIVE GRADE AUIRLS3034-7P HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 1.0m Logic Level Gate Drive max. Dynamic dv/dt Rating 1.4m 175 C Operating Temperature ID (Silicon Limited) 380A Fast Switching ID (Package Limited) 240A Repetitive Avalanche Allowed up to T

 9.10. Size:653K  infineon
 auirls3114z.pdf

AUTOMOTIVE GRADE AUIRLS3114Z HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) typ. 3.8m Logic Level Gate Drive max. 4.9m Enhanced dv/dt and di/dt capability ID (Silicon Limited) 122A 175 C Operating Temperature Fast Switching ID (Package Limited) 56A Repetitive Avalanche Allow

 9.11. Size:258K  inchange semiconductor
 irls3036.pdf

Isc N-Channel MOSFET Transistor IRLS3036 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt