IRLML0030TRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLML0030TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.4 nS
Cossⓘ - Capacitancia de salida: 84 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Paquete / Cubierta: SOT23 SOT346
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IRLML0030TRPBF Datasheet (PDF)
irlml0030trpbf.pdf
PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati
irlml0030trpbf.pdf
PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati
irlml0030trpbf.pdf
Product specificationIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilit
irlml0030tr.pdf
IRLML0030TRwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)
irlml0030pbf.pdf
PD - 96278BIRLML0030TRPbFHEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)IRLML0030TRPbFApplication(s) Load/ System SwitchFeatures and BenefitsBenefitsFeaturesLow RDS(on) ( 27m) Lower switching lossesIndustry-standard pinout Multi-vendor compatibilityCompati
irlml0030pbf-1.pdf
IRLML0030PbF-1HEXFET Power MOSFETVDS30 VVGS Max 20 VG 1RDS(on) max 27 m3 D(@VGS = 10V)RDS(on) max S 2Micro3TM (SOT-23)40 m(@VGS = 4.5V)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierM
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SRC65R085BS
History: SRC65R085BS
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918