IRFM250 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFM250
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 27.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 190(max) nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO254AA

Búsqueda de reemplazo de MOSFET IRFM250

IRFM250 Datasheet (PDF)

..1. Size:163K international rectifier
irfm250.pdf

PD - 90554EIRFM250JANTX2N7225JANTXV2N7225POWER MOSFETREF:MIL-PRF-19500/592THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM250 0.100 27.4AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-

0.1. Size:41K semelab
irfm250d.pdf

IRFM250DMECHANICAL DATANCHANNELDimensions in mm (inches)POWER MOSFETVDSS 200VID(cont) 27.4A RDS(on) 0.100 FEATURES NCHANNEL MOSFET

8.1. Size:60K njs
irfm254.pdf

9.1. Size:184K international rectifier
irfm260.pdf

PD - 91388CIRFM260POWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM260 0.060 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resistance combined with high transconductance. TO-254

9.2. Size:182K international rectifier
irfm240.pdf

PD - 90555DIRFM240JANTX2N7219JANTXV2N7219POWER MOSFETREF:MIL-PRF-19500/596THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si

9.3. Size:703K fairchild semi
irfm210btf fp001.pdf

November 2001IRFM210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.77A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fas

9.4. Size:726K fairchild semi
irfm220btf fp001.pdf

November 2001IRFM220B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast

9.5. Size:957K samsung
irfm220a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.626 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

9.6. Size:973K samsung
irfm214a.pdf

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.64 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Lower RDS(ON) : 1.393 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

9.7. Size:949K samsung
irfm210a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.77 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 1.169 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

9.8. Size:966K samsung
irfm224a.pdf

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Low RDS(ON) : 0.742 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Otros transistores... IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A , IRFM224A , IRFM240 , CS150N03A8 , IRFM340 , IRFM350 , IRFM360 , IRFM440 , IRFM460 , IRFM9140 , IRFM9240 , IRFN044 .

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