IRLML2402PBF-1 Todos los transistores

 

IRLML2402PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLML2402PBF-1

Código: A*

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.54 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 1.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 0.7 V

Tiempo de elevación (tr): 9.5 nS

Conductancia de drenaje-sustrato (Cd): 51 pF

Resistencia drenaje-fuente RDS(on): 0.25 Ohm

Empaquetado / Estuche: SOT23

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IRLML2402PBF-1 Datasheet (PDF)

1.1. irlml2402pbf.pdf Size:243K _international_rectifier

IRLML2402PBF-1
IRLML2402PBF-1

IRLML2402PbF l Generation V Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (<1.1mm) 3 D l Available in Tape and Reel l Fast Switching S 2 l Lead-Free RDS(on) = 0.25Ω l RoHS Compliant, Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu

1.2. irlml2402pbf-1.pdf Size:238K _international_rectifier

IRLML2402PBF-1
IRLML2402PBF-1

IRLML2402PbF-1 HEXFET® Power MOSFET VDS 20 V G 1 RDS(on) max 0.25 Ω (@V = 4.5V) GS 3 D Qg (typical) 2.6 nC ID S 2 1.2 A (@T = 25°C) A Micro3™(SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL

 1.3. irlml2402gpbf.pdf Size:216K _international_rectifier

IRLML2402PBF-1
IRLML2402PBF-1

PD - 96162A IRLML2402GPbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l N-Channel MOSFET G 1 VDSS = 20V l SOT-23 Footprint 3 D l Low Profile (<1.1mm) l Available in Tape and Reel S 2 l Fast Switching RDS(on) = 0.25Ω l Lead-Free l Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques

1.4. irlml2402.pdf Size:102K _international_rectifier

IRLML2402PBF-1
IRLML2402PBF-1

PD - 9.1257C IRLML2402 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance N-Channel MOSFET VDSS = 20V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.25? S Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico

 1.5. irlml2402-3.pdf Size:2075K _kexin

IRLML2402PBF-1
IRLML2402PBF-1

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 1.2 A( VGS = 4.5V) 1 2 +0.02 +0.1 ● RDS(ON) < 250mΩ (VGS = 4.5V) 0.15 -0.02 0.95 -0.1 +0.1 D 1.9-0.2 ● RDS(ON) < 350mΩ (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter

1.6. irlml2402.pdf Size:2065K _kexin

IRLML2402PBF-1
IRLML2402PBF-1

SMD Type MOSFET N-Channel MOSFET IRLML2402 (KRlML2402) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 20V ● ID = 1.2 A( VGS = 4.5V) 1 2 +0.1 +0.05 0.95 -0.1 ● RDS(ON) < 250mΩ (VGS = 4.5V) 0.1 -0.01 1.9+0.1 D -0.1 ● RDS(ON) < 350mΩ (VGS = 2.7V) 1. Gate G 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symb

1.7. irlml2402.pdf Size:1466K _shenzhen-tuofeng-semi

IRLML2402PBF-1
IRLML2402PBF-1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2402 l D l l l l G l Ω S l Description

Otros transistores... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

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