IRLML2502GPBF Todos los transistores

 ..1. Size:178K  international rectifier
 irlml2502gpbf.pdf

PD - 96163A IRLML2502GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

 4.1. Size:1532K  cn vbsemi
 irlml2502g.pdf

IRLML2502G www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Con

 5.1. Size:120K  international rectifier
 irlml2502.pdf

PD - 93757B IRLML2502 HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET G 1 SOT-23 Footprint VDSS = 20V Low Profile (

 5.2. Size:198K  international rectifier
 irlml2502trpbf.pdf

IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

 5.3. Size:188K  international rectifier
 irlml2502pbf-1.pdf

IRLML2502PbF-1 HEXFET Power MOSFET VDS 20 V RDS(on) max G 1 0.045 (@V = 4.5V) GS Qg (typical) 8.0 nC 3 D ID 4.2 A S 2 (@T = 25 C) A Micro3 (SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL

 5.4. Size:198K  international rectifier
 irlml2502pbf.pdf

IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

 5.5. Size:593K  shenzhen
 irlml2502.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML2502 Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

 5.6. Size:148K  tysemi
 irlml2502.pdf

Product specification IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint VDSS = 20V l Low Profile (

 5.7. Size:1435K  kexin
 irlml2502.pdf

SMD Type MOSFET N-Channel MOSFET IRLML2502 (KRLML2502) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 20V ID = 4.2 A 1 2 RDS(ON) 45m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 RDS(ON) 80m (VGS = 2.5V) 1.9 -0.1 Fast Switching 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25

 5.8. Size:1541K  kexin
 irlml2502-3.pdf

 5.9. Size:729K  umw-ic
 irlml2502.pdf

R UMW UMW IRLML2502 UMW IRLML2502 UMW IRLML2502 SOT-23 Plastic-Encapsulate MOSFETS N-Channel 20-V(D-S) MOSFET UMW IRLML2502 ID SOT-23 V(BR)DSS RDS(on)MAX 45m @4.5V 20V 4.2A 1. GATE 80 m @2.5V 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit 1G MK Maximum ratin

 5.10. Size:475K  huashuo
 irlml2502.pdf

IRLML2502 N-Ch 20V Fast Switching MOSFETs Product Summary Description The IRLML2502 is the high cell density VDS 20 V trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the RDS(ON),typ 30 m small power switching and load switch ID 3.6 A applications. The IRLML2502 meets the RoHS and Green Product requirement with full function reliabili

 5.11. Size:595K  cn yenji elec
 irlml2502.pdf

IRLML2502 N-Channel Enhancement-Mode MOSFET RoHS Device Halogen Free SOT-23 Features l Ultra Low On-Resistance l N-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (

 5.12. Size:920K  cn vbsemi
 irlml2502trpbf.pdf

IRLML2502TRPBF www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

 5.13. Size:227K  inchange semiconductor
 irfirlml2502trpbf.pdf

isc N-Channel MOSFET Transistor IRFIRLML2502TRPBF FEATURES Low drain-source on-resistance RDS(on) 45m Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provides the designer with an extremely efficient and reliable device for use in battery and load management. ABSOLUTE MAXIM