IRLML5103PBF-1 Todos los transistores

 

IRLML5103PBF-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLML5103PBF-1

Código: D*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.54 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.76 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Tiempo de elevación (tr): 8.2 nS

Conductancia de drenaje-sustrato (Cd): 37 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: SOT23

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IRLML5103PBF-1 Datasheet (PDF)

1.1. irlml5103gpbf.pdf Size:213K _international_rectifier

IRLML5103PBF-1
IRLML5103PBF-1

PD - 96165A IRLML5103GPbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance G 1 l P-Channel MOSFET VDSS = -30V l SOT-23 Footprint 3 D l Low Profile (<1.1mm) l Available in Tape and Reel S 2 RDS(on) = 0.60Ω l Fast Switching l Lead-Free l Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

1.2. irlml5103pbf.pdf Size:240K _international_rectifier

IRLML5103PBF-1
IRLML5103PBF-1

IRLML5103PbF HEXFET® Power MOSFET l Generation V Technology l Ultra Low On-Resistance l P-Channel MOSFET G 1 l SOT-23 Footprint VDSS = -30V l Low Profile (<1.1mm) 3 D l Available in Tape and Reel l Fast Switching S 2 RDS(on) = 0.60Ω l Lead-Free l RoHS Compliant, Halogen-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

 1.3. irlml5103pbf-1.pdf Size:241K _international_rectifier

IRLML5103PBF-1
IRLML5103PBF-1

IRLML2803PbF-1 HEXFET® Power MOSFET VDS 30 V RDS(on) max G 1 0.25 Ω (@V = 10V) GS Qg (typical) 3.3 nC 3 D ID 1.2 A S 2 (@T = 25°C) A Micro3™ Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industr

1.4. irlml5103.pdf Size:107K _international_rectifier

IRLML5103PBF-1
IRLML5103PBF-1

PD - 9.1260D IRLML5103 HEXFET Power MOSFET Generation V Technology D Ultra Low On-Resistance P-Channel MOSFET VDSS = -30V SOT-23 Footprint Low Profile (<1.1mm) G Available in Tape and Reel RDS(on) = 0.60? Fast Switching S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silic

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