IRLML6402GPBF Todos los transistores

 

IRLML6402GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLML6402GPBF

Código: E*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 3.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.2 V

Tiempo de elevación (tr): 48 nS

Conductancia de drenaje-sustrato (Cd): 145 pF

Resistencia drenaje-fuente RDS(on): 0.065 Ohm

Empaquetado / Estuche: SOT23_SOT346

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IRLML6402GPBF Datasheet (PDF)

1.1. irlml6402.pdf Size:81K _international_rectifier

IRLML6402GPBF
IRLML6402GPBF

PD- 93755 IRLML6402 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel MOSFET SOT-23 Footprint VDSS = -20V Low Profile (<1.1mm) Available in Tape and Reel G RDS(on) = 0.065? Fast Switching S Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, comb

1.2. irlml6402gpbf.pdf Size:168K _international_rectifier

IRLML6402GPBF
IRLML6402GPBF

PD - 96161A IRLML6402GPbF HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (<1.1mm) VDSS = -20V l Available in Tape and Reel 3 D l Fast Switching RDS(on) = 0.065Ω S 2 l Lead-Free l Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

 1.3. irlml6402pbf-1.pdf Size:187K _international_rectifier

IRLML6402GPBF
IRLML6402GPBF

IRLML6402PbF-1 HEXFET® Power MOSFET VDS -20 V RDS(on) max G 1 0.065 Ω (@V = -4.5V) GS Qg (typical) 8.0 nC 3 D ID -3.7 A S 2 (@T = 25°C) A Micro3™(SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility ⇒ Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier

1.4. irlml6402pbf.pdf Size:190K _international_rectifier

IRLML6402GPBF
IRLML6402GPBF

IRLML6402PbF HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (<1.1mm) VDSS = -20V l Available in Tape and Reel 3 D l Fast Switching l Lead-Free RDS(on) = 0.065Ω S 2 l RoHS Compliant, Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 1.5. irlml6402.pdf Size:140K _tysemi

IRLML6402GPBF
IRLML6402GPBF

Product specification IRLML6402PbF HEXFET® Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (<1.1mm) VDSS = -20V l Available in Tape and Reel 3 D l Fast Switching RDS(on) = 0.065Ω S 2 l Lead-Free l Halogen-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extrem

1.6. irlml6402.pdf Size:2191K _kexin

IRLML6402GPBF
IRLML6402GPBF

SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 ( KRLML6402) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 3 ● Ultra low on-resistance. ● P-Channel MOSFET. ● SOT-23 Footprint. 1 2 +0.1 +0.05 0.95 -0.1 ● Low profile(<1.1mm). 0.1 -0.01 +0.1 1.9 -0.1 ● Available in tape and reel. ● Fast switching. 1.Base 1. Gate 2.Emitter 2. Source 3

1.7. irlml6402-3.pdf Size:1984K _kexin

IRLML6402GPBF
IRLML6402GPBF

SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 ( KRLML6402) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. 1 2 ● SOT-23 Footprint. +0.02 +0.1 0.15 -0.02 0.95-0.1 ● Low profile(<1.1mm). +0.1 1.9 -0.2 ● Available in tape and reel. ● Fast switching. 1.Base 1. Gate 2.Emitter 2. Source

1.8. irlml6402.pdf Size:660K _shenzhen-tuofeng-semi

IRLML6402GPBF
IRLML6402GPBF

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6402 Power MOSFET l Ultra Low On-Resistance D l P-Channel MOSFET l SOT-23 Footprint VDSS = -20V l Low Profile (<1.1mm) l Available in Tape and Reel G RDS(on) = 0.065Ω l Fast Switching S Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- re

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