IRLML6402GPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRLML6402GPBF
   Código: E*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 8 nC
   trⓘ - Tiempo de subida: 48 nS
   Cossⓘ - Capacitancia de salida: 145 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: SOT23 SOT346

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IRLML6402GPBF Datasheet (PDF)

..1. Size:168K international rectifier
irlml6402gpbf.pdf

PD - 96161AIRLML6402GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

..2. Size:173K infineon
irlml6402gpbf.pdf

PD - 96161AIRLML6402GPbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

4.1. Size:1531K cn vbsemi
irlml6402g.pdf

IRLML6402Gwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

5.1. Size:81K international rectifier
irlml6402.pdf

PD- 93755IRLML6402HEXFET Power MOSFET Ultra Low On-ResistanceD P-Channel MOSFET SOT-23 FootprintVDSS = -20V Low Profile (

5.2. Size:187K international rectifier
irlml6402pbf-1.pdf

IRLML6402PbF-1HEXFET Power MOSFETVDS -20 VRDS(on) max G 10.065 (@V = -4.5V)GSQg (typical) 8.0 nC3 DID -3.7 AS 2(@T = 25C)AMicro3(SOT-23)Features BenefitsIndustry-standard pinout SOT-23 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally Friendlier

5.3. Size:190K international rectifier
irlml6402pbf.pdf

IRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

5.4. Size:196K infineon
irlml6402pbf.pdf

IRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

5.5. Size:660K shenzhen
irlml6402.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6402Power MOSFETl Ultra Low On-ResistanceDl P-Channel MOSFETl SOT-23 FootprintVDSS = -20Vl Low Profile (

5.6. Size:140K tysemi
irlml6402.pdf

Product specificationIRLML6402PbFHEXFET Power MOSFETl Ultra Low On-Resistancel P-Channel MOSFETl SOT-23 FootprintG 1l Low Profile (

5.7. Size:2191K kexin
irlml6402.pdf

SMD Type MOSFETP-Channel Enhancement MOSFETIRLML6402 ( KRLML6402)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint.1 2+0.1+0.050.95 -0.1 Low profile(1.1mm). 0.1 -0.01+0.11.9 -0.1 Available in tape and reel. Fast switching.1.Base1. Gate2.Emitter2. Source3

5.8. Size:1984K kexin
irlml6402-3.pdf

SMD Type MOSFETP-Channel Enhancement MOSFETIRLML6402 ( KRLML6402)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features Ultra low on-resistance. P-Channel MOSFET.1 2 SOT-23 Footprint.+0.02+0.10.15 -0.020.95-0.1 Low profile(1.1mm). +0.11.9 -0.2 Available in tape and reel. Fast switching.1.Base1. Gate2.Emitter2. Source

5.9. Size:3289K slkor
irlml6402.pdf

IRLML6402LOW VOLTAGE MOSFET (P-CHANNEL) Power MOSFETl Ultra Low On-ResistanceDl P-Channel MOSFETl SOT-23 FootprintVDSS = -20Vl Low Profile (

5.10. Size:3461K umw-ic
irlml6402.pdf

RUMW UMW IRLML6402UMW IRLML6402UMW IRLML6402P-Channel Enhancement MOSFETSOT23 Features Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile(1.1mm). Available in tape and reel.1. BASE Fast switching.2. EMITTER 3. COLLECTORMARKING 1E MK Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drai

5.11. Size:520K huashuo
irlml6402.pdf

IRLML6402 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6402 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6402 meet the RoHS and Green Product requirement with full function reliability approved

5.12. Size:639K cn shikues
irlml6402.pdf

IRLML6402P-Channel Enhancement Mode MOSFETChannel Enhancement Mode MOSFET Feature -20V/-3A, RDS(ON) = 125m(MAX) @VGS = -4.5V. GS RDS(ON) = 140m(MAX) @VGS = -2.5V. GS Super High dense cell design for extremely low RSuper High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package Applications Power Managem

5.13. Size:913K cn vbsemi
irlml6402trpbf.pdf

IRLML6402TRPBFwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATI

5.14. Size:193K inchange semiconductor
irlml6402.pdf

INCHANGE Semiconductorisc P-Channel MOSFET Transistor IRLML6402DESCRIPTIONUltra low on-resistanceP-Channel MOSFETSOT-23 FootprintAvailable in tape and reelMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed switching applicationSwitching regulator ,DC-DC converter and Motordrive applicationABSOLUTE MAXIM

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