IRLML6402PBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLML6402PBF 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 145 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Encapsulados: SOT23
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IRLML6402PBF datasheet
..1. Size:196K international rectifier
irlml6402pbf.pdf 
IRLML6402PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (
0.1. Size:187K international rectifier
irlml6402pbf-1.pdf
IRLML6402PbF-1 HEXFET Power MOSFET VDS -20 V RDS(on) max G 1 0.065 (@V = -4.5V) GS Qg (typical) 8.0 nC 3 D ID -3.7 A S 2 (@T = 25 C) A Micro3 (SOT-23) Features Benefits Industry-standard pinout SOT-23 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier
5.1. Size:173K international rectifier
irlml6402gpbf.pdf
PD - 96161A IRLML6402GPbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (
5.2. Size:81K international rectifier
irlml6402.pdf
PD- 93755 IRLML6402 HEXFET Power MOSFET Ultra Low On-Resistance D P-Channel MOSFET SOT-23 Footprint VDSS = -20V Low Profile (
5.3. Size:660K shenzhen
irlml6402.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd IRLML6402 Power MOSFET l Ultra Low On-Resistance D l P-Channel MOSFET l SOT-23 Footprint VDSS = -20V l Low Profile (
5.4. Size:140K tysemi
irlml6402.pdf
Product specification IRLML6402PbF HEXFET Power MOSFET l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint G 1 l Low Profile (
5.5. Size:2191K kexin
irlml6402.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 ( KRLML6402) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. 1 2 +0.1 +0.05 0.95 -0.1 Low profile( 1.1mm). 0.1 -0.01 +0.1 1.9 -0.1 Available in tape and reel. Fast switching. 1.Base 1. Gate 2.Emitter 2. Source 3
5.6. Size:1984K kexin
irlml6402-3.pdf
SMD Type MOSFET P-Channel Enhancement MOSFET IRLML6402 ( KRLML6402) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features Ultra low on-resistance. P-Channel MOSFET. 1 2 SOT-23 Footprint. +0.02 +0.1 0.15 -0.02 0.95-0.1 Low profile( 1.1mm). +0.1 1.9 -0.2 Available in tape and reel. Fast switching. 1.Base 1. Gate 2.Emitter 2. Source
5.7. Size:3289K slkor
irlml6402.pdf
IRLML6402 LOW VOLTAGE MOSFET (P-CHANNEL) Power MOSFET l Ultra Low On-Resistance D l P-Channel MOSFET l SOT-23 Footprint VDSS = -20V l Low Profile (
5.8. Size:3461K umw-ic
irlml6402.pdf
R UMW UMW IRLML6402 UMW IRLML6402 UMW IRLML6402 P-Channel Enhancement MOSFET SOT 23 Features Ultra low on-resistance. P-Channel MOSFET. SOT-23 Footprint. Low profile( 1.1mm). Available in tape and reel. 1. BASE Fast switching. 2. EMITTER 3. COLLECTOR MARKING 1E MK Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drai
5.9. Size:1250K born
irlml6402.pdf
IRLML6402 P-Channel MOSFET Features Pin Configurations V = -20V DS I D = -3.7A R @V = -4.5V, TYP =50m DS(ON) GS R @V = -2.5V, TYP =80m DS(ON) GS General Description Advanced tr ench process technology High Density Cell Design For Ultra Low On-Resistance SOT-23 for Surface Mount Package. Absolute Maximum Ratings @T =25 unless otherwise noted A
5.10. Size:520K huashuo
irlml6402.pdf
IRLML6402 P-Ch 20V Fast Switching MOSFETs Description Product Summary The IRLML6402 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 45 m converter applications. ID -4.9 A The IRLML6402 meet the RoHS and Green Product requirement with full function reliability approved
5.11. Size:639K cn shikues
irlml6402.pdf
IRLML6402 P-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature -20V/-3A, RDS(ON) = 125m (MAX) @VGS = -4.5V. GS RDS(ON) = 140m (MAX) @VGS = -2.5V. GS Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) Reliable and Rugged SOT-23 for Surface Mount Package Applications Power Managem
5.12. Size:913K cn vbsemi
irlml6402trpbf.pdf
IRLML6402TRPBF www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI
5.13. Size:1531K cn vbsemi
irlml6402g.pdf
IRLML6402G www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS
5.14. Size:193K inchange semiconductor
irlml6402.pdf
INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRLML6402 DESCRIPTION Ultra low on-resistance P-Channel MOSFET SOT-23 Footprint Available in tape and reel Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed switching application Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIM
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