IRFI630B MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRFI630B datasheet

..1. Size:712K fairchild semi
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IRFW630B / IRFI630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switc

7.1. Size:215K 1
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7.2. Size:927K international rectifier
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PD - 94846 IRFI630GPbF Lead-Free 11/14/03 Document Number 91148 www.vishay.com 1 IRFI630GPbF Document Number 91148 www.vishay.com 2 IRFI630GPbF Document Number 91148 www.vishay.com 3 IRFI630GPbF Document Number 91148 www.vishay.com 4 IRFI630GPbF Document Number 91148 www.vishay.com 5 IRFI630GPbF Document Number 91148 www.vishay.com 6 IRFI630GPbF TO-220 Full

7.3. Size:1541K vishay
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IRFI630G, SiHFI630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.40 f = 60 Hz) RoHS* Qg (Max.) (nC) 43 COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Low Thermal Resistance Configuration S

Otros transistores... IRLD120PBF , IRLF120 , IRFJ240 , IRFV064 , IRFV260 , IRFV360 , IRFV460 , IRFW610B , IRF1404 , IRFW710B , IRFI064 , IRFI1010NPBF , IRFI1310NPBF , IRFI260 , IRFI3205PBF , IRFI360 , IRFI4110GPBF .