IRFI510G Todos los transistores

 

IRFI510G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFI510G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 27 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 16 nS

Conductancia de drenaje-sustrato (Cd): 81 pF

Resistencia drenaje-fuente RDS(on): 0.54 Ohm

Empaquetado / Estuche: TO220F

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IRFI510G Datasheet (PDF)

1.1. irfi510g irfi510gpbf.pdf Size:1038K _upd

IRFI510G
IRFI510G

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ()VGS = 10 V 0.54 RoHS* COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 • 175 °C Operating Temperature Qgs (nC) 2.3 • Dynamic dV/dt Rating Qgd (nC) 3.8 • Low

1.2. irfi510g.pdf Size:159K _international_rectifier

IRFI510G
IRFI510G

Document Number: 90178 www.vishay.com 563 Document Number: 90178 www.vishay.com 564 Document Number: 90178 www.vishay.com 565 Document Number: 90178 www.vishay.com 566 Document Number: 90178 www.vishay.com 567 Document Number: 90178 www.vishay.com 568 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of i

 5.1. irfi520g irfi520gpbf.pdf Size:1603K _upd

IRFI510G
IRFI510G

IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (Ω)VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature Qgs (nC) 4.4 • Dynamic dV/dt Rating Qgd (nC) 7.7 • Low Th

5.2. irfi530g irfi530gpbf.pdf Size:932K _upd

IRFI510G
IRFI510G

IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 Available • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) (Ω)VGS = 10 V 0.16 RoHS* COMPLIANT • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 33 • 175 °C Operating Temperature Qgs (nC) 5.4 • Dynamic dV/dt Rating Qgd (nC) 15 • Low T

 5.3. irfi540g irfi540gpbf.pdf Size:1475K _upd

IRFI510G
IRFI510G

IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (Ω)VGS = 10 V 0.077 f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT • 175 °C Operating Temperature Qgs (nC) 11 • Dynamic dV/dt Rating Qgd (nC) 32 • Low T

5.4. irfw550a irfi550a.pdf Size:266K _fairchild_semi

IRFI510G
IRFI510G

IRFW/I550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK ? 175 C Operating Temperature 2 A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 1 2 3 3 1. Gate 2. Drai

 5.5. irfi520n.pdf Size:133K _international_rectifier

IRFI510G
IRFI510G

PD - 9.1362A PRELIMINARY IRFI520N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.20? Fully Avalanche Rated G ID = 7.6A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-re

5.6. irfi540g.pdf Size:175K _international_rectifier

IRFI510G
IRFI510G

5.7. irfi530n.pdf Size:133K _international_rectifier

IRFI510G
IRFI510G

PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.11? Fully Avalanche Rated G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-re

5.8. irfi530g.pdf Size:158K _international_rectifier

IRFI510G
IRFI510G

Document Number: 90180 www.vishay.com 575 Document Number: 90180 www.vishay.com 576 Document Number: 90180 www.vishay.com 577 Document Number: 90180 www.vishay.com 578 Document Number: 90180 www.vishay.com 579 Document Number: 90180 www.vishay.com 580 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of i

5.9. irfi5210.pdf Size:143K _international_rectifier

IRFI510G
IRFI510G

PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely l

5.10. irfi540npbf.pdf Size:262K _international_rectifier

IRFI510G
IRFI510G

PD - 94833 IRFI540NPbF HEXFET® Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.052Ω l Fully Avalanche Rated G l Lead-Free ID = 20A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowes

5.11. irfi540gpbf.pdf Size:2156K _international_rectifier

IRFI510G
IRFI510G

PD - 94942 IRFI540GPbF Lead-Free 1/13/04 Document Number: 91144 www.vishay.com 1 IRFI540GPbF Document Number: 91144 www.vishay.com 2 IRFI540GPbF Document Number: 91144 www.vishay.com 3 IRFI540GPbF Document Number: 91144 www.vishay.com 4 IRFI540GPbF Document Number: 91144 www.vishay.com 5 IRFI540GPbF Document Number: 91144 www.vishay.com 6 IRFI540GPbF TO-220 Full-Pak P

5.12. irfi530npbf.pdf Size:223K _international_rectifier

IRFI510G
IRFI510G

PD - 95419 IRFI530NPbF HEXFET® Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS … VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.11Ω l Lead-Free G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

5.13. irfi520gpbf.pdf Size:1017K _international_rectifier

IRFI510G
IRFI510G

PD- 95392 IRFI520GPbF Lead-Free 06/10/04 Document Number: 91143 www.vishay.com 1 IRFI520GPbF Document Number: 91143 www.vishay.com 2 IRFI520GPbF Document Number: 91143 www.vishay.com 3 IRFI520GPbF Document Number: 91143 www.vishay.com 4 IRFI520GPbF Document Number: 91143 www.vishay.com 5 IRFI520GPbF Document Number: 91143 www.vishay.com 6 IRFI520GPbF Document Number:

5.14. irfi520g.pdf Size:178K _international_rectifier

IRFI510G
IRFI510G

5.15. irfi540n.pdf Size:131K _international_rectifier

IRFI510G
IRFI510G

PD - 9.1361A PRELIMINARY IRFI540N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.052? Fully Avalanche Rated G ID = 20A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-re

5.16. irfi540g sihfi540g.pdf Size:1473K _vishay

IRFI510G
IRFI510G

IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (?)VGS = 10 V 0.077 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low Thermal Resistance

5.17. irfi520g sihfi520g.pdf Size:1601K _vishay

IRFI510G
IRFI510G

IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) (?)VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 4.4 Dynamic dV/dt Rating Qgd (nC) 7.7 Low Thermal Resistance

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