IRFI510G Datasheet. Equivalente

 ..1. Size:159K  international rectifier
 irfi510g.pdf

Document Number 90178 www.vishay.com 563 Document Number 90178 www.vishay.com 564 Document Number 90178 www.vishay.com 565 Document Number 90178 www.vishay.com 566 Document Number 90178 www.vishay.com 567 Document Number 90178 www.vishay.com 568 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o

 ..2. Size:1038K  vishay
 irfi510g irfi510gpbf sihfi510g.pdf

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low

 ..3. Size:1040K  vishay
 irfi510g sihfi510g.pdf

IRFI510G, SiHFI510G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = 10 V 0.54 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 8.3 175 C Operating Temperature Qgs (nC) 2.3 Dynamic dV/dt Rating Qgd (nC) 3.8 Low

 ..4. Size:274K  inchange semiconductor
 irfi510g.pdf

iscN-Channel MOSFET Transistor IRFI510G FEATURES Low drain-source on-resistance RDS(ON) =0.54 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 7.1. Size:282K  1
 irfi510a irfw510a.pdf

 9.1. Size:285K  1
 irfi540a irfw540a.pdf

 9.2. Size:272K  1
 irfi530a irfw530a.pdf

 9.3. Size:215K  1
 irfi520a irfw520a.pdf

 9.4. Size:262K  international rectifier
 irfi540npbf.pdf

PD - 94833 IRFI540NPbF HEXFET Power MOSFET l Advanced Process Technology D l Isolated Package VDSS = 100V l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.052 l Fully Avalanche Rated G l Lead-Free ID = 20A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowes

 9.5. Size:133K  international rectifier
 irfi530n.pdf

PD - 9.1353A IRFI530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.11 Fully Avalanche Rated G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible

 9.6. Size:178K  international rectifier
 irfi520g.pdf

 9.7. Size:158K  international rectifier
 irfi530g.pdf

Document Number 90180 www.vishay.com 575 Document Number 90180 www.vishay.com 576 Document Number 90180 www.vishay.com 577 Document Number 90180 www.vishay.com 578 Document Number 90180 www.vishay.com 579 Document Number 90180 www.vishay.com 580 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part o

 9.8. Size:223K  international rectifier
 irfi530npbf.pdf

PD - 95419 IRFI530NPbF HEXFET Power MOSFET l Advanced Process Technology l Isolated Package D l High Voltage Isolation = 2.5KVRMS VDSS = 100V l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated RDS(on) = 0.11 l Lead-Free G ID = 12A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest

 9.9. Size:131K  international rectifier
 irfi540n.pdf

PD - 9.1361A PRELIMINARY IRFI540N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.052 Fully Avalanche Rated G ID = 20A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible

 9.10. Size:1017K  international rectifier
 irfi520gpbf.pdf

PD- 95392 IRFI520GPbF Lead-Free 06/10/04 Document Number 91143 www.vishay.com 1 IRFI520GPbF Document Number 91143 www.vishay.com 2 IRFI520GPbF Document Number 91143 www.vishay.com 3 IRFI520GPbF Document Number 91143 www.vishay.com 4 IRFI520GPbF Document Number 91143 www.vishay.com 5 IRFI520GPbF Document Number 91143 www.vishay.com 6 IRFI520GPbF Document Num

 9.11. Size:133K  international rectifier
 irfi520n.pdf

PD - 9.1362A PRELIMINARY IRFI520N HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.20 Fully Avalanche Rated G ID = 7.6A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible

 9.12. Size:2156K  international rectifier
 irfi540gpbf.pdf

PD - 94942 IRFI540GPbF Lead-Free 1/13/04 Document Number 91144 www.vishay.com 1 IRFI540GPbF Document Number 91144 www.vishay.com 2 IRFI540GPbF Document Number 91144 www.vishay.com 3 IRFI540GPbF Document Number 91144 www.vishay.com 4 IRFI540GPbF Document Number 91144 www.vishay.com 5 IRFI540GPbF Document Number 91144 www.vishay.com 6 IRFI540GPbF TO-220 Full-

 9.13. Size:175K  international rectifier
 irfi540g.pdf

 9.14. Size:143K  international rectifier
 irfi5210.pdf

PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.06 P-Channel G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

 9.15. Size:266K  fairchild semi
 irfw550a irfi550a.pdf

IRFW/I550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK 175 C Operating Temperature 2 A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 1 2 3 3 1. Gat

 9.16. Size:1473K  vishay
 irfi540g sihfi540g.pdf

IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.077 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low T

 9.17. Size:932K  vishay
 irfi530g irfi530gpbf sihfi530g.pdf

IRFI530G, SiHFI530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) RDS(on) ( )VGS = 10 V 0.16 RoHS* COMPLIANT Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 33 175 C Operating Temperature Qgs (nC) 5.4 Dynamic dV/dt Rating Qgd (nC) 15 Low T

 9.18. Size:1603K  vishay
 irfi520g irfi520gpbf sihfi520g.pdf

IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 4.4 Dynamic dV/dt Rating Qgd (nC) 7.7 Low Th

 9.19. Size:1601K  vishay
 irfi520g sihfi520g.pdf

IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.27 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 4.4 Dynamic dV/dt Rating Qgd (nC) 7.7 Low Th

 9.20. Size:1475K  vishay
 irfi540g irfi540gpbf sihfi540g.pdf

IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = 10 V 0.077 f = 60 Hz) RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low T

 9.21. Size:499K  infineon
 irfi540npbf.pdf

IRFI540NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.052 Fully Avalanche Rated Lead-Free ID 20A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

 9.22. Size:501K  infineon
 irfi530npbf.pdf

IRFI530NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.11 Fully Avalanche Rated Lead-Free ID 12A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 9.23. Size:1476K  cn vbsemi
 irfi540gpbf.pdf

IRFI540GPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.034 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-220 FULLPAK G S S D G N-Channel MOSFET ABSOLUTE MA

 9.24. Size:275K  inchange semiconductor
 irfi520g.pdf

iscN-Channel MOSFET Transistor IRFI510G FEATURES Low drain-source on-resistance RDS(ON) =0.27 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.25. Size:275K  inchange semiconductor
 irfi530g.pdf

iscN-Channel MOSFET Transistor IRFI530G FEATURES Low drain-source on-resistance RDS(ON) =0.16 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.26. Size:244K  inchange semiconductor
 irfi540n.pdf

isc N-Channel MOSFET Transistor IRFI540N FEATURES Low drain-source on-resistance RDS(on) 52m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.27. Size:275K  inchange semiconductor
 irfi540g.pdf

iscN-Channel MOSFET Transistor IRFI540G FEATURES Low drain-source on-resistance RDS(ON) =0.077 (MAX) Enhancement mode Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN