IRFI540NPBF Todos los transistores

 

IRFI540NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFI540NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 94 nC
   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: TO220F
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IRFI540NPBF Datasheet (PDF)

 ..1. Size:262K  international rectifier
irfi540npbf.pdf pdf_icon

IRFI540NPBF

PD - 94833IRFI540NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.052l Fully Avalanche RatedGl Lead-FreeID = 20ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowes

 ..2. Size:499K  infineon
irfi540npbf.pdf pdf_icon

IRFI540NPBF

IRFI540NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.052 Fully Avalanche Rated Lead-Free ID 20A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

 6.1. Size:131K  international rectifier
irfi540n.pdf pdf_icon

IRFI540NPBF

PD - 9.1361APRELIMINARY IRFI540NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.052 Fully Avalanche RatedGID = 20ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

 6.2. Size:244K  inchange semiconductor
irfi540n.pdf pdf_icon

IRFI540NPBF

isc N-Channel MOSFET Transistor IRFI540NFEATURESLow drain-source on-resistance:RDS(on) 52m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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