IRFI540NPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFI540NPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: TO220F

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IRFI540NPBF Datasheet (PDF)

..1. Size:262K international rectifier
irfi540npbf.pdf

PD - 94833IRFI540NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Isolated PackageVDSS = 100Vl High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.052l Fully Avalanche RatedGl Lead-FreeID = 20ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowes

..2. Size:499K infineon
irfi540npbf.pdf

IRFI540NPbF Advanced Process Technology HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS VDSS 100V Sink to Lead Creepage Dist. = 4.8mm RDS(on) 0.052 Fully Avalanche Rated Lead-Free ID 20A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

6.1. Size:131K international rectifier
irfi540n.pdf

PD - 9.1361APRELIMINARY IRFI540NHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.052 Fully Avalanche RatedGID = 20ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible

6.2. Size:244K inchange semiconductor
irfi540n.pdf

isc N-Channel MOSFET Transistor IRFI540NFEATURESLow drain-source on-resistance:RDS(on) 52m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

7.1. Size:285K 1
irfi540a irfw540a.pdf

7.2. Size:2156K international rectifier
irfi540gpbf.pdf

PD - 94942IRFI540GPbF Lead-Free1/13/04Document Number: 91144 www.vishay.com1IRFI540GPbFDocument Number: 91144 www.vishay.com2IRFI540GPbFDocument Number: 91144 www.vishay.com3IRFI540GPbFDocument Number: 91144 www.vishay.com4IRFI540GPbFDocument Number: 91144 www.vishay.com5IRFI540GPbFDocument Number: 91144 www.vishay.com6IRFI540GPbFTO-220 Full-

7.3. Size:175K international rectifier
irfi540g.pdf

7.4. Size:1473K vishay
irfi540g sihfi540g.pdf

IRFI540G, SiHFI540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;AvailableRDS(on) ()VGS = 10 V 0.077 f = 60 Hz)RoHS* Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low T

7.5. Size:1475K vishay
irfi540g irfi540gpbf sihfi540g.pdf

7.6. Size:1476K cn vbsemi
irfi540gpbf.pdf

IRFI540GPBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE MA

7.7. Size:275K inchange semiconductor
irfi540g.pdf

iscN-Channel MOSFET Transistor IRFI540GFEATURESLow drain-source on-resistance:RDS(ON) =0.077 (MAX)Enhancement mode:Vth = 2 to 4V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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