IRFI740B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFI740B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 134 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
   Paquete / Cubierta: TO262

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IRFI740B Datasheet (PDF)

..1. Size:679K fairchild semi
irfw740b irfi740b.pdf

November 2001IRFW740B / IRFI740B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 10A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

7.1. Size:220K 1
irfi740a irfw740a.pdf

7.2. Size:221K international rectifier
irfi740glc.pdf

7.3. Size:925K international rectifier
irfi740g.pdf

PD - 94854IRFI740GPbF Lead-Free11/19/03Document Number: 91156 www.vishay.com1IRFI740GPbFDocument Number: 91156 www.vishay.com2IRFI740GPbFDocument Number: 91156 www.vishay.com3IRFI740GPbFDocument Number: 91156 www.vishay.com4IRFI740GPbFDocument Number: 91156 www.vishay.com5IRFI740GPbFDocument Number: 91156 www.vishay.com6IRFI740GPbFTO-220 Full

7.4. Size:1583K vishay
irfi740g sihfi740g.pdf

IRFI740G, SiHFI740GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 400 High Voltage Isolation = 2.5 kVRMS (t = 60 s; AvailableRDS(on) ()VGS = 10 V 0.55f = 60 Hz)RoHS*Qg (Max.) (nC) 66COMPLIANT Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 10 Dynamic dV/dt RatingQgd (nC) 33 Low Thermal ResistanceConfiguration Sin

7.5. Size:1296K vishay
irfi740glc sihfi740glc.pdf

IRFI740GLC, SiHFI740GLCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 400 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.55 Enhanced 30 V VGS RatingRoHS* Isolated PackageQg (Max.) (nC) 39COMPLIANT High Voltage Isolation = 2.5 kVRMS (t = 60 s,Qgs (nC) 10f = 60 Hz)Qgd (nC) 19 Sink to Lead C

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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