IRFI840GLCPBF Todos los transistores

 ..1. Size:1023K  international rectifier
 irfi840glcpbf.pdf

PD - 94865 IRFI840GLCPbF Lead-Free 12/4/03 Document Number 91160 www.vishay.com 1 IRFI840GLCPbF Document Number 91160 www.vishay.com 2 IRFI840GLCPbF Document Number 91160 www.vishay.com 3 IRFI840GLCPbF Document Number 91160 www.vishay.com 4 IRFI840GLCPbF Document Number 91160 www.vishay.com 5 IRFI840GLCPbF Document Number 91160 www.vishay.com 6 IRFI840GLCPbF

 ..2. Size:1651K  vishay
 irfi840glcpbf sihfi840glc.pdf

IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Cr

 4.1. Size:225K  international rectifier
 irfi840glc.pdf

 4.2. Size:1649K  vishay
 irfi840glc sihfi840glc.pdf

IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Isolated Package Qgs (nC) 10 High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Qgd (nC) 19 Sink to Lead Cr

 6.1. Size:1303K  international rectifier
 irfi840gpbf.pdf

PD - 94864 IRFI840GPbF Lead-Free www.irf.com 1 12/03/03 IRFI840GPbF 2 www.irf.com IRFI840GPbF www.irf.com 3 IRFI840GPbF 4 www.irf.com IRFI840GPbF www.irf.com 5 IRFI840GPbF 6 www.irf.com IRFI840GPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XAMP L E T H IS IS AN IR F I84 0G WIT H AS S E

 6.2. Size:169K  international rectifier
 irfi840g.pdf

 6.3. Size:2785K  vishay
 irfi840g sihfi840g.pdf

IRFI840G, SiHFI840G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 500 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s, RDS(on) ( )VGS = 10 V 0.85 f = 60 Hz) RoHS* COMPLIANT Qg (Max.) (nC) 67 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 10 Dynamic dV/dt Rating Qgd (nC) 34 Low Thermal Resistance Configuration Si

 6.4. Size:825K  cn vbsemi
 irfi840gpbf.pdf

IRFI840GPBF www.VBsemi.tw N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy rated (UIS) Qgd (nC) 5.4 Configur