IRFI9520G Todos los transistores

 ..1. Size:170K  international rectifier
 irfi9520g.pdf

 ..2. Size:1009K  international rectifier
 irfi9520gpbf.pdf

PD- 95391 IRFI9520GPbF Lead-Free 06/10/04 Document Number 91162 www.vishay.com 1 IRFI9520GPbF Document Number 91162 www.vishay.com 2 IRFI9520GPbF Document Number 91162 www.vishay.com 3 IRFI9520GPbF Document Number 91162 www.vishay.com 4 IRFI9520GPbF Document Number 91162 www.vishay.com 5 IRFI9520GPbF Document Number 91162 www.vishay.com 6 IRFI9520GPbF Docum

 ..3. Size:1446K  vishay
 irfi9520g sihfi9520g.pdf

IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 0.60 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Configuration

 ..4. Size:1448K  vishay
 irfi9520g irfi9520gpbf sihfi9520g.pdf

IRFI9520G, SiHFI9520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) ( )VGS = - 10 V 0.60 f = 60 Hz) RoHS* Qg (Max.) (nC) 18 Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qgs (nC) 3.0 P-Channel Qgd (nC) 9.0 175 C Operating Temperature Configuration

 6.1. Size:103K  international rectifier
 irfi9520n.pdf

PD - 9.1527 IRFI9520N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.48 P-Channel G Fully Avalanche Rated ID = -5.5A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extr

 8.1. Size:145K  international rectifier
 irfi9540n.pdf

PD - 9.1487B IRFI9540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.117 P-Channel G Fully Avalanche Rated ID = -15A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext

 8.2. Size:284K  international rectifier
 irfi9540g.pdf

PD - 95609 IRFI9540GPbF Lead-Free 7/29/03 Document Number 91164 www.vishay.com 1 IRFI9540GPbF Document Number 91164 www.vishay.com 2 IRFI9540GPbF Document Number 91164 www.vishay.com 3 IRFI9540GPbF Document Number 91164 www.vishay.com 4 IRFI9540GPbF Document Number 91164 www.vishay.com 5 IRFI9540GPbF Document Number 91164 www.vishay.com 6 IRFI9540GPbF Peak

 8.3. Size:2151K  international rectifier
 irfi9530gpbf.pdf

PD - 94932 IRFI9530GPbF Lead-Free 1/8/04 Document Number 91163 www.vishay.com 1 IRFI9530GPbF Document Number 91163 www.vishay.com 2 IRFI9530GPbF Document Number 91163 www.vishay.com 3 IRFI9530GPbF Document Number 91163 www.vishay.com 4 IRFI9530GPbF Document Number 91163 www.vishay.com 5 IRFI9530GPbF Document Number 91163 www.vishay.com 6 IRFI9530GPbF TO-220

 8.4. Size:174K  international rectifier
 irfi9530g.pdf

 8.5. Size:1458K  vishay
 irfi9530g sihfi9530g.pdf

IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.30 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 38 COMPLIANT P-Channel Qgs (nC) 6.8 175 C Operating Temperature Qgd (nC) 21 Dynamic dV/

 8.6. Size:944K  vishay
 irfi9540g-pbf sihfi9540g.pdf

IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.20 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT P-Channel Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Dynamic dV/dt

 8.7. Size:943K  vishay
 irfi9540g sihfi9540g.pdf

IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.20 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT P-Channel Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Dynamic dV/dt

 8.8. Size:1460K  vishay
 irfi9530gpbf sihfi9530g.pdf

IRFI9530G, SiHFI9530G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.30 RoHS* Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 38 COMPLIANT P-Channel Qgs (nC) 6.8 175 C Operating Temperature Qgd (nC) 21 Dynamic dV/

 8.9. Size:2870K  cn vbsemi
 irfi9540gp.pdf

IRFI9540GP www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET - 100 11.7 0.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC C

 8.10. Size:1462K  cn vbsemi
 irfi9530g.pdf

IRFI9530G www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET - 100 11.7 0.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch DC/DC Co