IRLB3034PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLB3034PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 195 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 827 nS
Cossⓘ - Capacitancia de salida: 1980 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRLB3034PBF MOSFET
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IRLB3034PBF datasheet
irlb3034pbf.pdf
PD -97363 IRLB3034PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 40V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.4m l Uninterruptible Power Supply max. 1.7m l High Speed Power Switching G ID (Silicon Limited) 343A l Hard Switched and High Frequency Circuits ID (Package Limited) 195A S Benefits l Optimized for Logic Level Drive l
irlb3036gpbf.pdf
PD - 96275 IRLB3036GPbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive
irlb3036pbf.pdf
PD - 97357 IRLB3036PbF HEXFET Power MOSFET Applications D l DC Motor Drive VDSS 60V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 1.9m l Uninterruptible Power Supply max. 2.4m l High Speed Power Switching G ID (Silicon Limited) 270A l Hard Switched and High Frequency Circuits ID (Package Limited) S 195A Benefits l Optimized for Logic Level Drive
auirlb3036.pdf
AUTOMOTIVE GRADE AUIRLB3036 HEXFET Power MOSFET Features D l Advanced Process Technology VDSS 60V l Ultra Low On-Resistance RDS(on) typ. 1.9m l Logic Level Gate Drive max. 2.4m l Dynamic dv/dt Rating G ID (Silicon Limited) l 175 C Operating Temperature 270A l Fast Switching ID (Package Limited) S 195A l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compli
Otros transistores... IRFIB6N60APBF , IRFIB7N50APBF , IRFIB7N50LPBF , IRFIB8N50K , IRFIBC30GPBF , IRL8113LPBF , IRL8113SPBF , IRL8114PBF , P60NF06 , IRLB3036GPBF , IRLB3036PBF , IRLB3813PBF , IRLB4030PBF , IRLB8314PBF , IRLB8721PBF , IRLB8743PBF , IRLB8748PBF .
History: SSI60R190S2E
History: SSI60R190S2E
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