IRL7833LPBF Todos los transistores

 

IRL7833LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL7833LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 950 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
   Paquete / Cubierta: TO262
     - Selección de transistores por parámetros

 

IRL7833LPBF Datasheet (PDF)

 ..1. Size:269K  international rectifier
 irl7833pbf irl7833lpbf irl7833spbf.pdf pdf_icon

IRL7833LPBF

PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A

 ..2. Size:269K  international rectifier
 irl7833pbf irl7833spbf irl7833lpbf.pdf pdf_icon

IRL7833LPBF

PD - 95270IRL7833PbFIRL7833SPbFIRL7833LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckVDSS RDS(on) maxQgConverters for Computer Processor Powerl High Frequency Isolated DC-DC30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Usel Lead-FreeBenefitsl Very Low RDS(on) at 4.5V VGSl Ultra-Low Gate Impedance TO-220A

 7.1. Size:246K  inchange semiconductor
 irl7833.pdf pdf_icon

IRL7833LPBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL7833IIRL7833FEATURESStatic drain-source on-resistance:RDS(on) 3.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

 7.2. Size:270K  inchange semiconductor
 irl7833s.pdf pdf_icon

IRL7833LPBF

isc N-Channel MOSFET Transistor IRL7833SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 3.8m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATING

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HUFA76423S3ST | P06P03LDG | NCE65TF099F

 

 
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