IRL7833SPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL7833SPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 950 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm
Encapsulados: TO263
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IRL7833SPBF datasheet
irl7833pbf irl7833lpbf irl7833spbf.pdf
PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance TO-220A
irl7833pbf irl7833spbf irl7833lpbf.pdf
PD - 95270 IRL7833PbF IRL7833SPbF IRL7833LPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 3.8m 32nC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance TO-220A
irl7833s.pdf
isc N-Channel MOSFET Transistor IRL7833S DESCRIPTION Static drain-source on-resistance RDS(on) 3.8m @V = 10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATING
irl7833.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL7833 IIRL7833 FEATURES Static drain-source on-resistance RDS(on) 3.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R
Otros transistores... IRLB8314PBF , IRLB8721PBF , IRLB8743PBF , IRLB8748PBF , IRL7472L1TRPBF , IRL7486MTRPBF , IRL7833LPBF , IRL7833PBF , AON7403 , IRL620PBF , IRL620SPBF , IRL6283M , IRL6297SDPBF , IRL630PBF , IRL630SPBF , IRL6342PBF , IRL640PBF .
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