IRL510PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL510PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 43 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 5.6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 47 nS
Cossⓘ - Capacitancia de salida: 80 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET IRL510PBF
IRL510PBF Datasheet (PDF)
irl510pbf.pdf
PD - 95406IRL510PbF Lead-Free6/17/04Document Number: 91297 www.vishay.com1IRL510PbFDocument Number: 91297 www.vishay.com2IRL510PbFDocument Number: 91297 www.vishay.com3IRL510PbFDocument Number: 91297 www.vishay.com4IRL510PbFDocument Number: 91297 www.vishay.com5IRL510PbFDocument Number: 91297 www.vishay.com6IRL510PbFTO-220AB Package Outline
irl510pbf sihl510.pdf
IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si
irl510s.pdf
Document Number: 90380 www.vishay.com1313Document Number: 90380 www.vishay.com1314Document Number: 90380 www.vishay.com1315Document Number: 90380 www.vishay.com1316Document Number: 90380 www.vishay.com1317Document Number: 90380 www.vishay.com1318Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as
irl510a.pdf
IRL510AFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate ChargeTO-220 Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maxi
irl510a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Logic-Level Gate DriveRDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 5.6 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Rating
irl510s sihl510s.pdf
IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4
irl510spbf sihl510s.pdf
IRL510S, SiHL510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 5 V 0.54 Available in Tape and Reel Qg (Max.) (nC) 6.1 Dynamic dV/dt Rating Repetitive Avalanche RatedQgs (nC) 2.6 Logic-Level Gate DriveQgd (nC) 3.3 RDS(on) Specified at VGS = 4
irl510 sihl510.pdf
IRL510, SiHL510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 5.0 V 0.54RoHS* Logic-Level Gate DriveCOMPLIANTQg (Max.) (nC) 6.1 RDS(on) Specified at VGS = 4 V and 5 VQgs (nC) 2.6 175 C Operating TemperatureQgd (nC) 3.3 Fast SwitchingConfiguration Si
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 18N10
History: 18N10
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918