IRL530NLPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL530NLPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 Vtrⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 160 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Paquete / Cubierta: TO262
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IRL530NLPBF Datasheet (PDF)
irl530nspbf irl530nlpbf.pdf
PD- 95593IRL530NSPbFIRL530NLPbF Lead-Freewww.irf.com 107/21/04IRL530NS/LPbF2 www.irf.comIRL530NS/LPbFwww.irf.com 3IRL530NS/LPbF4 www.irf.comIRL530NS/LPbFwww.irf.com 5IRL530NS/LPbF6 www.irf.comIRL530NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance
irl530nspbf irl530nlpbf.pdf
PD- 95593IRL530NSPbFIRL530NLPbF Lead-Freewww.irf.com 107/21/04IRL530NS/LPbF2 www.irf.comIRL530NS/LPbFwww.irf.com 3IRL530NS/LPbF4 www.irf.comIRL530NS/LPbFwww.irf.com 5IRL530NS/LPbF6 www.irf.comIRL530NS/LPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance
irl530ns irl530nl.pdf
PD - 91349BIRL530NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRL530NS) Low-profile through-hole (IRL530NL) 175C Operating TemperatureRDS(on) = 0.10G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low
irl530nl.pdf
Isc N-Channel MOSFET Transistor IRL530NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
irl530n.pdf
PD - 91348BIRL530NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.10 Fast SwitchingG Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per
irl530npbf.pdf
PD - 95451IRL530NPbF Lead-Freewww.irf.com 16/23/04IRL530NPbF2 www.irf.comIRL530NPbFwww.irf.com 3IRL530NPbF4 www.irf.comIRL530NPbFwww.irf.com 5IRL530NPbF6 www.irf.comIRL530NPbFwww.irf.com 7IRL530NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13
irl530n.pdf
isc N-Channel MOSFET Transistor IRL530NIIRL530NFEATURESStatic drain-source on-resistance:RDS(on) 0.1Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONReliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
irl530ns.pdf
Isc N-Channel MOSFET Transistor IRL530NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
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