IRL540NSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRL540NSPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   trⓘ - Tiempo de subida: 81 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
   Paquete / Cubierta: TO263

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IRL540NSPBF Datasheet (PDF)

..1. Size:914K international rectifier
irl540nspbf.pdf

PD- 95234IRL540NS/LPbF Lead-Freewww.irf.com 105/04/04IRL540NS/LPbF2 www.irf.comIRL540NS/LPbFwww.irf.com 3IRL540NS/LPbF4 www.irf.comIRL540NS/LPbFwww.irf.com 5IRL540NS/LPbF6 www.irf.comIRL540NS/LPbFwww.irf.com 7IRL540NS/LPbFD2Pak Package OutlineDimensions are shown in millimeters (inches)D2Pak Part Marking Information (Lead-Free)T H IS IS AN IR

..2. Size:914K infineon
irl540nspbf irl540nlpbf.pdf

6.1. Size:182K international rectifier
irl540ns irl540nl.pdf

PD -91535IRL540NS/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRL540NS)VDSS = 100V Low-profile through-hole (IRL540NL) 175C Operating TemperatureRDS(on) = 0.044 Fast SwitchingG Fully Avalanche RatedID = 36ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low

6.2. Size:257K inchange semiconductor
irl540ns.pdf

Isc N-Channel MOSFET Transistor IRL540NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

7.1. Size:1046K international rectifier
irl540npbf.pdf

PD - 94997IRL540NPbFHEXFET Power MOSFET Lead-Freewww.irf.com 12/10/04IRL540NPbF2 www.irf.comIRL540NPbFwww.irf.com 3IRL540NPbF4 www.irf.comIRL540NPbFwww.irf.com 5IRL540NPbF6 www.irf.comIRL540NPbFwww.irf.com 7IRL540NPbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4

7.2. Size:132K international rectifier
irl540n.pdf

PD - 91495AIRL540NHEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process TechnologyVDSS = 100V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.044 Fast Switching G Fully Avalanche RatedID = 36ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per

7.3. Size:1046K infineon
irl540npbf.pdf

7.4. Size:255K inchange semiconductor
irl540n.pdf

isc N-Channel MOSFET Transistor IRL540N,IIRL540NFEATURESLow drain-source on-resistance:RDS(on) 44m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

7.5. Size:255K inchange semiconductor
irl540nl.pdf

Isc N-Channel MOSFET Transistor IRL540NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

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