IRL3803VL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRL3803VL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 200 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 16 V
   Corriente continua de drenaje |Id|: 140 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tiempo de subida (tr): 180 nS
   Conductancia de drenaje-sustrato (Cd): 1480 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
   Paquete / Cubierta: TO262

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IRL3803VL Datasheet (PDF)

..1. Size:273K international rectifier
irl3803vspbf irl3803vlpbf.pdf

PD - 95449IRL3803VSPbFIRL3803VLPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 30Vl Surface Mount (IRL3803VS)l Low-profile through-hole (IRL3803VL)RDS(on) = 5.5ml 175C Operating TemperatureGl Fast Switchingl Fully Avalanche Rated ID = 140ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rec

..2. Size:225K international rectifier
irl3803vl irl3803vs.pdf

PD - 94735IRL3803VSIRL3803VLHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 30Vl Surface Mount (IRL3803VS)l Low-profile through-hole (IRL3803VL)RDS(on) = 5.5ml 175C Operating TemperatureGl Fast SwitchingID = 140Al Fully Avalanche RatedSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize ad

6.1. Size:210K international rectifier
irl3803vpbf.pdf

PD - 95955IRL3803VPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Fully Avalanche RatedID = 140Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

6.2. Size:251K inchange semiconductor
irl3803vs.pdf

isc N-Channel MOSFET Transistor IRL3803VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

6.3. Size:245K inchange semiconductor
irl3803v.pdf

isc N-Channel MOSFET Transistor IRL3803VIIRL3803VFEATURESStatic drain-source on-resistance:RDS(on) 5.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an ext

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