IRL3803VPBF Todos los transistores

 

IRL3803VPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL3803VPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 200 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 16 V

Corriente continua de drenaje (Id): 140 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Tiempo de elevación (tr): 180 nS

Conductancia de drenaje-sustrato (Cd): 1480 pF

Resistencia drenaje-fuente RDS(on): 0.0055 Ohm

Empaquetado / Estuche: TO220AB

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IRL3803VPBF Datasheet (PDF)

1.1. irl3803vpbf.pdf Size:210K _upd

IRL3803VPBF
IRL3803VPBF

PD - 95955 IRL3803VPbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 5.5mΩ l Fast Switching G l Fully Avalanche Rated ID = 140A‡ l Lead-Free S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

2.1. irl3803vspbf irl3803vlpbf.pdf Size:273K _upd

IRL3803VPBF
IRL3803VPBF

PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5mΩ l 175°C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A‡ S l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rec

2.2. irl3803vl irl3803vs.pdf Size:225K _upd

IRL3803VPBF
IRL3803VPBF

PD - 94735 IRL3803VS IRL3803VL HEXFET® Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5mΩ l 175°C Operating Temperature G l Fast Switching ID = 140A‡ l Fully Avalanche Rated S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize ad

 2.3. irl3803vs.pdf Size:251K _inchange_semiconductor

IRL3803VPBF
IRL3803VPBF

isc N-Channel MOSFET Transistor IRL3803VS ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a

2.4. irl3803v.pdf Size:245K _inchange_semiconductor

IRL3803VPBF
IRL3803VPBF

isc N-Channel MOSFET Transistor IRL3803V,IIRL3803V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an ext

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