IRL3803VPBF Todos los transistores

 ..1. Size:210K  international rectifier
 irl3803vpbf.pdf

PD - 95955 IRL3803VPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 30V l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 5.5m l Fast Switching G l Fully Avalanche Rated ID = 140A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

 6.1. Size:273K  international rectifier
 irl3803vspbf irl3803vlpbf.pdf

PD - 95449 IRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching l Fully Avalanche Rated ID = 140A S l Lead-Free Description Advanced HEXFET Power MOSFETs from International Rec

 6.2. Size:225K  international rectifier
 irl3803vl irl3803vs.pdf

PD - 94735 IRL3803VS IRL3803VL HEXFET Power MOSFET l Logic-Level Gate Drive D l Advanced Process Technology VDSS = 30V l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) RDS(on) = 5.5m l 175 C Operating Temperature G l Fast Switching ID = 140A l Fully Avalanche Rated S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize ad

 6.3. Size:251K  inchange semiconductor
 irl3803vs.pdf

isc N-Channel MOSFET Transistor IRL3803VS FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 6.4. Size:245K  inchange semiconductor
 irl3803v.pdf

isc N-Channel MOSFET Transistor IRL3803V IIRL3803V FEATURES Static drain-source on-resistance RDS(on) 5.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an ext