IRL3803VSPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL3803VSPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 180 nS
Cossⓘ - Capacitancia de salida: 1480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO263
- Selección de transistores por parámetros
IRL3803VSPBF Datasheet (PDF)
irl3803vspbf irl3803vlpbf.pdf

PD - 95449IRL3803VSPbFIRL3803VLPbFHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 30Vl Surface Mount (IRL3803VS)l Low-profile through-hole (IRL3803VL)RDS(on) = 5.5ml 175C Operating TemperatureGl Fast Switchingl Fully Avalanche Rated ID = 140ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rec
irl3803vl irl3803vs.pdf

PD - 94735IRL3803VSIRL3803VLHEXFET Power MOSFETl Logic-Level Gate DriveDl Advanced Process TechnologyVDSS = 30Vl Surface Mount (IRL3803VS)l Low-profile through-hole (IRL3803VL)RDS(on) = 5.5ml 175C Operating TemperatureGl Fast SwitchingID = 140Al Fully Avalanche RatedSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize ad
irl3803vs.pdf

isc N-Channel MOSFET Transistor IRL3803VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
irl3803vpbf.pdf

PD - 95955IRL3803VPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 30Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 5.5ml Fast SwitchingGl Fully Avalanche RatedID = 140Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WM02N08L | CP650



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
fhp40n20 | 2n3035 transistor | 2sb649a | 2sd188 | k b778 transistor | 2n5133 datasheet | 2sa726 transistor | 7506 mosfet