IRL3713SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRL3713SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 330 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 260 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 75 nC
   trⓘ - Tiempo de subida: 160 nS
   Cossⓘ - Capacitancia de salida: 3130 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO263

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IRL3713SPBF Datasheet (PDF)

..1. Size:721K international rectifier
irl3713pbf irl3713spbf irl3713lpbf.pdf

PD - 97011BIRL3713PbFSMPS MOSFET IRL3713SPbFIRL3713LPbFApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max (mW) ID for Telecom and Industrial Use30V 3.0@VGS = 10V 260Al High Frequency Buck Converters forComputer Processor Powerl 100% RG Testedl Lead-FreeBenefitsl Ultra-Low Gate Impedancel

..2. Size:278K infineon
irl3713spbf.pdf

SMPS MOSFETIRL3713SPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max (mW) IDl High Frequency Isolated DC-DC30V 3.0@VGS = 10V 260AConverters with Synchronous Rectificationfor Telecom and Industrial Usel High Frequency Buck Converters for ComputerProcessor Powerl 100% RG TestedBenefitsl Ultra-Low Gate ImpedanceTO-220AB D2Pak TO-262l Very Low RDS(on) at 4.5V VGS

6.1. Size:239K international rectifier
irl3713 irl3713l irl3713s.pdf

PD - 94184DIRL3713SMPS MOSFETIRL3713SIRL3713LApplicationsHEXFET Power MOSFETl High Frequency Isolated DC-DC Converters with Synchronous RectificationVDSS RDS(on) max (mW) ID for Telecom and Industrial Use30V 3.0@VGS = 10V 260Al High Frequency Buck Converters forComputer Processor Powerl 100% RG TestedBenefitsl Ultra-Low Gate Impedancel Very Low RDS(on) at

6.2. Size:204K inchange semiconductor
irl3713s.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3713SFEATURESWith TO-263(D2PAK) packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency isolated DC-DC converters withsynchronous rectification for telecom and industrial use

7.1. Size:176K international rectifier
irl3713.pdf

PD - 94184CIRL3713SMPS MOSFETIRL3713SIRL3713LHEXFET Power MOSFETApplications)VDSS RDS(on) max (m) ID))) High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 3.0@VGS = 10V 260A for Telecom and Industrial Use High Frequency Buck Converters forComputer Processor PowerBenefits Ultra-Low Gate Impedance Very Low RDS(on) at

7.2. Size:246K inchange semiconductor
irl3713.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL3713 IIRL3713FEATURESStatic drain-source on-resistance:RDS(on) 3.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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