IRL1404ZPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL1404ZPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 230 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 2.7 V

Qgⓘ - Carga de la puerta: 75 nC

trⓘ - Tiempo de subida: 180 nS

Cossⓘ - Capacitancia de salida: 870 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm

Encapsulados: TO220AB

 Búsqueda de reemplazo de IRL1404ZPBF MOSFET

- Selecciónⓘ de transistores por parámetros

 

IRL1404ZPBF datasheet

 ..1. Size:285K  international rectifier
irl1404zpbf irl1404zspbf irl1404zlpbf.pdf pdf_icon

IRL1404ZPBF

PD - 95446B IRL1404ZPbF IRL1404ZSPbF IRL1404ZLPbF Features l Logic Level HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 40V l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.1m l Lead-Free G ID = 120A S Description This HEXFET Power MOSFET utilizes the latest processing techniqu

 6.1. Size:375K  international rectifier
auirl1404zstrl.pdf pdf_icon

IRL1404ZPBF

PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS AUIRL1404ZL Features HEXFET Power MOSFET l Logic Level l Advanced Process Technology V(BR)DSS 40V D l Ultra Low On-Resistance l 175 C Operating Temperature RDS(on) typ. 2.5m l Fast Switching max. 3.1m l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu

 6.2. Size:754K  infineon
auirl1404z auirl1404zs auirl1404zl.pdf pdf_icon

IRL1404ZPBF

AUIRL1404Z AUIRL1404ZS AUTOMOTIVE GRADE AUIRL1404ZL HEXFET Power MOSFET Features VDSS 40V Logic Level Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.1m 175 C Operating Temperature ID (Silicon Limited) 180A Fast Switching ID (Package Limited) 160A Repetitive Avalanche Allowed up to Tjmax

 6.3. Size:252K  inchange semiconductor
irl1404z.pdf pdf_icon

IRL1404ZPBF

isc N-Channel MOSFET Transistor IRL1404Z FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a S

Otros transistores... IRL1104L, IRL1104LPBF, IRL1104PBF, IRL1104S, IRL1104SPBF, IRL1404LPBF, IRL1404PBF, IRL1404SPBF, 75N75, IRL2203NLPBF, IRL2203NPBF, IRL2203NSPBF, IRL2505PBF, IRL2505SPBF, IRL2703PBF, IRL2703SPBF, IRL2910PBF