IRL1404ZPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRL1404ZPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 230 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 120 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.7 V
Carga de la puerta (Qg): 75 nC
Tiempo de subida (tr): 180 nS
Conductancia de drenaje-sustrato (Cd): 870 pF
Resistencia entre drenaje y fuente RDS(on): 0.0031 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET IRL1404ZPBF
IRL1404ZPBF Datasheet (PDF)
irl1404zpbf irl1404zspbf irl1404zlpbf.pdf
PD - 95446BIRL1404ZPbFIRL1404ZSPbFIRL1404ZLPbFFeaturesl Logic LevelHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 40Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 3.1ml Lead-FreeGID = 120ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
irl1404zpbf irl1404zspbf irl1404zlpbf.pdf
PD - 95446BIRL1404ZPbFIRL1404ZSPbFIRL1404ZLPbFFeaturesl Logic LevelHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 40Vl 175C Operating Temperaturel Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 3.1ml Lead-FreeGID = 120ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniqu
auirl1404zstrl.pdf
PD - 96331AUTOMOTIVE GRADEAUIRL1404ZAUIRL1404ZSAUIRL1404ZLFeaturesHEXFET Power MOSFETl Logic Levell Advanced Process TechnologyV(BR)DSS 40VDl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) typ.2.5ml Fast Switching max. 3.1ml Repetitive Avalanche Allowed up to TjmaxGl Lead-Free, RoHS Compliant ID (Silicon Limited) 180A l Automotive Qu
auirl1404z auirl1404zs auirl1404zl.pdf
AUIRL1404Z AUIRL1404ZS AUTOMOTIVE GRADE AUIRL1404ZL HEXFET Power MOSFET Features VDSS 40V Logic Level Advanced Process Technology RDS(on) typ. 2.5m Ultra Low On-Resistance max. 3.1m 175C Operating Temperature ID (Silicon Limited) 180A Fast Switching ID (Package Limited) 160A Repetitive Avalanche Allowed up to Tjmax
irl1404z.pdf
isc N-Channel MOSFET Transistor IRL1404ZFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
