IRL2203NLPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL2203NLPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 116 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 160 nS

Cossⓘ - Capacitancia de salida: 1270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO262

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IRL2203NLPBF datasheet

 ..1. Size:290K  international rectifier
irl2203nlpbf irl2203nspbf.pdf pdf_icon

IRL2203NLPBF

PD - 95219A IRL2203NSPbF IRL2203NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D VDSS = 30V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0m G l 100% RG Tested l Lead-Free ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

 ..2. Size:290K  international rectifier
irl2203nspbf irl2203nlpbf.pdf pdf_icon

IRL2203NLPBF

PD - 95219A IRL2203NSPbF IRL2203NLPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D VDSS = 30V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 7.0m G l 100% RG Tested l Lead-Free ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced

 5.1. Size:132K  international rectifier
irl2203ns irl2203nl.pdf pdf_icon

IRL2203NLPBF

PD - 94394 IRL2203NS IRL2203NL HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 30V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 7.0m Fast Switching G Fully Avalanche Rated ID = 116A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

 6.1. Size:186K  international rectifier
irl2203npbf.pdf pdf_icon

IRL2203NLPBF

PD - 94953 IRL2203NPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 30V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature RDS(on) = 7.0m G l Fast Switching l Fully Avalanche Rated ID = 116A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

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