IRL2910SPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRL2910SPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 140 nC
   trⓘ - Tiempo de subida: 100 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET IRL2910SPBF

IRL2910SPBF Datasheet (PDF)

..1. Size:682K international rectifier
irl2910spbf irl2910lpbf.pdf

PD - 95149IRL2910S/LPbFHEXFET Power MOSFET Logic-Level Gate Drive Surface MountD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 Fast SwitchingG Fully Avalanche RatedID = 55A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext

..2. Size:684K infineon
irl2910spbf irl2910lpbf.pdf

6.1. Size:194K international rectifier
irl2910s irl2910l.pdf

PD - 91376BIRL2910S/LHEXFET Power MOSFET Logic-Level Gate DriveD Surface MountVDSS = 100V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.026 Dynamic dv/dt RatingG Fast Switching Fully Avalanche RatedID = 55ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-

6.2. Size:258K inchange semiconductor
irl2910s.pdf

Isc N-Channel MOSFET Transistor IRL2910SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

7.1. Size:146K international rectifier
irl2910n.pdf

PD 9.1375IRL2910PRELIMINARYHEXFET Power MOSFETLogic-Level Gate DriveAdvanced Process TechnologyVDSS = 100VUltra Low On-ResistanceDynamic dv/dt RatingRDS(on) = 0.026175C Operating TemperatureFast SwitchingID = 48AFully Avalanche RatedDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achieve extremely l

7.2. Size:1541K international rectifier
irl2910pbf.pdf

PD - 94993IRL2910PbF Lead-Freewww.irf.com 12/10/04IRL2910PbF2 www.irf.comIRL2910PbFwww.irf.com 3IRL2910PbF4 www.irf.comIRL2910PbFwww.irf.com 5IRL2910PbF6 www.irf.comIRL2910PbFwww.irf.com 7IRL2910PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.13

7.3. Size:124K international rectifier
irl2910.pdf

PD - 91375BIRL2910HEXFET Power MOSFET Logic-Level Gate DriveD Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.026 175C Operating TemperatureG Fast SwitchingID = 55A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextrem

7.4. Size:1541K infineon
irl2910pbf.pdf

7.5. Size:801K cn vbsemi
irl2910pbf.pdf

IRL2910PBFwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.018 at VGS = 10 V10070aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGG D SSTop ViewN-Channel MOSFETABSOLUTE

7.6. Size:256K inchange semiconductor
irl2910l.pdf

Isc N-Channel MOSFET Transistor IRL2910LFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

7.7. Size:244K inchange semiconductor
irl2910.pdf

isc N-Channel MOSFET Transistor IRL2910IIRL2910FEATURESStatic drain-source on-resistance:RDS(on) 0.026Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK9219-55A

Liste

Recientemente añadidas las descripciónes de los transistores: