IRHY57Z30CM Todos los transistores

 ..1. Size:224K  international rectifier
 irhy57034cm irhy57130cm irhy57z30cm.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/702D shall be completed by 26 May 2014. 26 February 2014 SUPERSEDING MIL-PRF-19500/702C 21 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484

 ..2. Size:112K  international rectifier
 irhy57z30cm.pdf

PD - 93824A RADIATION HARDENED IRHY57Z30CM POWER MOSFET 30V, N-CHANNEL THRU-HOLE (TO-257AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHY57Z30CM 100K Rads (Si) 0.03 18A* IRHY53Z30CM 300K Rads (Si) 0.03 18A* IRHY54Z30CM 600K Rads (Si) 0.03 18A* IRHY58Z30CM 1000K Rads (Si) 0.035 18A* TO-257AA International Rectifier s R5TM tech

 8.1. Size:174K  international rectifier
 irhy57234cmse.pdf

PD-93823C RADIATION HARDENED IRHY57234CMSE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-257AA) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0.41 9.6A TO-257AA International Rectifier s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized Features f

 8.2. Size:118K  international rectifier
 irhy57230cm.pdf

PD - 93827A RADIATION HARDENED IRHY57230CM POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHY57230CM 100K Rads (Si) 0.21 12.5A IRHY53230CM 300K Rads (Si) 0.21 12.5A IRHY54230CM 600K Rads (Si) 0.21 12.5A IRHY58230CM 1000K Rads (Si) 0.26 12.5A TO-257AA International Rectifier s R5TM

 8.3. Size:175K  international rectifier
 irhy57133cmse.pdf

PD - 94318C IRHY57133CMSE RADIATION HARDENED JANSR2N7488T3 POWER MOSFET 130V, N-CHANNEL THRU-HOLE (TO-257AA) REF MIL-PRF-19500/705 5 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57133CMSE 100K Rads (Si) 0.09 18A* JANSR2N7488T3 T0-257AA International Rectifier s R5TM technology provides high performance power MOSFETs for sp

 8.4. Size:119K  international rectifier
 irhy57034cm.pdf

PD - 93825A RADIATION HARDENED IRHY57034CM POWER MOSFET 60V, N-CHANNEL THRU-HOLE (TO-257AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHY57034CM 100K Rads (Si) 0.04 18A* IRHY53034CM 300K Rads (Si) 0.04 18A* IRHY54034CM 600K Rads (Si) 0.04 18A* IRHY58034CM 1000K Rads (Si) 0.048 18A* TO-257AA International Rectifier s R5TM tech

 8.5. Size:115K  international rectifier
 irhy57130cm.pdf

PD - 93826A RADIATION HARDENED IRHY57130CM POWER MOSFET 100V, N-CHANNEL THRU-HOLE (TO-257AA) TECHNOLOGY 4 4# c Product Summary Part Number Radiation Level RDS(on) ID IRHY57130CM 100K Rads (Si) 0.07 18A* IRHY53130CM 300K Rads (Si) 0.07 18A* IRHY54130CM 600K Rads (Si) 0.07 18A* IRHY58130CM 1000K Rads (Si) 0.085 18A* TO-257AA International Rectifier s R5TM tec

 8.6. Size:174K  international rectifier
 irhy57230cmse.pdf

PD - 93822B IRHY57230CMSE RADIATION HARDENED JANSR2N7489T3 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-257AA) REF MIL-PRF-19500/705 TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23 12A JANSR2N7489T3 TO-257AA International Rectifier s R5TM technology provides high performance power MOSFETs for spac