IRFP048 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFP048
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 190 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 110(max) nC
   trⓘ - Tiempo de subida: 250 nS
   Cossⓘ - Capacitancia de salida: 1300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO247AC

Búsqueda de reemplazo de MOSFET IRFP048

IRFP048 Datasheet (PDF)

..1. Size:174K international rectifier
irfp048.pdf

..2. Size:1574K vishay
irfp048 sihfp048.pdf

IRFP048, SiHFP048Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Isolated Central Mounting HoleRDS(on) ()VGS = 10 V 0.018RoHS* 175 C Operating TemperatureCOMPLIANTQg (Max.) (nC) 110 Ease of ParallelingQgs (nC) 29 Simple Drive RequirementsQgd (nC) 38 Compliant to RoHS Directive 2002/95/ECConfi

..3. Size:944K vishay
irfp048pbf sihfp048.pdf

..4. Size:400K inchange semiconductor
irfp048.pdf

iscN-Channel MOSFET Transistor IRFP048FEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.1. Size:117K international rectifier
irfp048n.pdf

PD - 9.1409AIRFP048NHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.016 Fully Avalanche RatedGID = 64ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisben

0.2. Size:863K international rectifier
irfp048r.pdf

0.3. Size:2284K international rectifier
irfp048rpbf.pdf

PD- 95502IRFP048RPbF Lead-FreeAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V70*ID @ TC = 100C Continuous Drain Current, VGS @ 10V52 AIDM290Pulsed Drain Current PD @TC = 25CPower Dissipation 190 WLinear Derating Factor 1.3 W/CVGSGate-to-Source Voltage V20Single Pulse Avalanche Energy EAS200 mJPe

0.4. Size:1519K international rectifier
irfp048npbf.pdf

PD- 95422IRFP048NPbF Lead-Freewww.irf.com 106/16/04IRFP048NPbF2 www.irf.comIRFP048NPbFwww.irf.com 3IRFP048NPbF4 www.irf.comIRFP048NPbFwww.irf.com 5IRFP048NPbF6 www.irf.comIRFP048NPbFwww.irf.com 7IRFP048NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)TO-247AC Part Marking InformationEXAMPLE: THIS IS AN IRFPE30 WITH ASS

0.5. Size:1519K infineon
irfp048npbf.pdf

0.6. Size:241K inchange semiconductor
irfp048n.pdf

isc N-Channel MOSFET Transistor IRFP048NIIRFP048NFEATURESStatic drain-source on-resistance:RDS(on)16mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

0.7. Size:400K inchange semiconductor
irfp048r.pdf

iscN-Channel MOSFET Transistor IRFP048RFEATURESLow drain-source on-resistance:RDS(ON) 18m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Otros transistores... IRFN450 , IRFN9130 , IRFN9130SMD , IRFN9140 , IRFN9140SMD , IRFN9240 , IRFP044 , IRFP044N , IRF530 , IRFP048N , IRFP054 , IRFP054N , IRFP064 , IRFP064N , IRFP130 , IRFP131 , IRFP132 .

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