IRHN9150 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHN9150
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 35 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO276AB

Búsqueda de reemplazo de MOSFET IRHN9150

IRHN9150 Datasheet (PDF)

..1. Size:128K international rectifier
irhn9150.pdf

PD - 90885DIRHN9150RADIATION HARDENED JANSR2N7422UPOWER MOSFET 100V, P-CHANNELSURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/662RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9150 100K Rads (Si) 0.080 -22A JANSR2N7422U IRHN93150 300K Rads (Si) 0.080 -22A JANSF2N7422USMD-1International Rectifiers RADHard HEXFET

..2. Size:272K international rectifier
irhm9150 irhm9250 irhn9150 irhn9250.pdf

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

8.1. Size:127K international rectifier
irhn9130.pdf

PD - 90886CRADIATION HARDENED IRHN9130POWER MOSFET 100V, P-CHANNELSURFACE MOUNT (SMD-1) RAD-Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID IRHN9130 100K Rads (Si) 0.3 -11A IRHN93130 300K Rads (Si) 0.3 -11AInternational Rectifiers RAD-Hard HEXFETTM technol- SMD-1ogy provides high performance power MOSFETs forspace applications. Th

9.1. Size:126K international rectifier
irhn9250.pdf

PD - 91300BIRHN9250RADIATION HARDENED JANSR2N7423UPOWER MOSFET 200V, P-CHANNELSURFACE MOUNT (SMD-1) REF: MIL-PRF-19500/662RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9250 100K Rads (Si) 0.315 -14A JANSR2N7423U IRHN93250 300K Rads (Si) 0.315 -14A JANSF2N7423USMD-1International Rectifiers RADHard HEXFET

9.2. Size:117K international rectifier
irhn93150.pdf

Provisional Data Sheet No. PD - 9.885BREPETITIVE AVALANCHE AND dv/dt RATED IRHN9150IRHN93150HEXFET TRANSISTORP-CHANNEL RAD HARD -100Volt, 0.075, RAD HARD HEXFETProduct SummaryInternational Rectifiers P-Channel RAD HARD tech-Part Number BVDSS RDS(on) IDnology HEXFETs demonstrate excellent thresholdIRHN9150 -100V 0.075 -22Avoltage stability a

9.3. Size:36K international rectifier
irhn9230.pdf

Provisional Data Sheet No. PD-9.1445REPETITIVE AVALANCHE AND dv/dt RATEDIRHN9230HEXFET TRANSISTORP-CHANNELRAD HARD-200 Volt, 0.8 RAD HARD HEXFET Product Summary, International Rectifiers P-Channel RAD HARD technologyPart Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltage stabilityand breakdown voltage stability at total radiati

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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