IRHN9150 Todos los transistores

 ..1. Size:128K  international rectifier
 irhn9150.pdf

PD - 90885D IRHN9150 RADIATION HARDENED JANSR2N7422U POWER MOSFET 100V, P-CHANNEL SURFACE MOUNT (SMD-1) REF MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9150 100K Rads (Si) 0.080 -22A JANSR2N7422U IRHN93150 300K Rads (Si) 0.080 -22A JANSF2N7422U SMD-1 International Rectifier s RADHard HEXFET

 ..2. Size:272K  international rectifier
 irhm9150 irhm9250 irhn9150 irhn9250.pdf

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

 8.1. Size:127K  international rectifier
 irhn9130.pdf

PD - 90886C RADIATION HARDENED IRHN9130 POWER MOSFET 100V, P-CHANNEL SURFACE MOUNT (SMD-1) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN9130 100K Rads (Si) 0.3 -11A IRHN93130 300K Rads (Si) 0.3 -11A International Rectifier s RAD-Hard HEXFETTM technol- SMD-1 ogy provides high performance power MOSFETs for space applications. Th

 9.1. Size:126K  international rectifier
 irhn9250.pdf

PD - 91300B IRHN9250 RADIATION HARDENED JANSR2N7423U POWER MOSFET 200V, P-CHANNEL SURFACE MOUNT (SMD-1) REF MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9250 100K Rads (Si) 0.315 -14A JANSR2N7423U IRHN93250 300K Rads (Si) 0.315 -14A JANSF2N7423U SMD-1 International Rectifier s RADHard HEXFET

 9.2. Size:117K  international rectifier
 irhn93150.pdf

Provisional Data Sheet No. PD - 9.885B REPETITIVE AVALANCHE AND dv/dt RATED IRHN9150 IRHN93150 HEXFET TRANSISTOR P-CHANNEL RAD HARD -100Volt, 0.075 , RAD HARD HEXFET Product Summary International Rectifier s P-Channel RAD HARD tech- Part Number BVDSS RDS(on) ID nology HEXFETs demonstrate excellent threshold IRHN9150 -100V 0.075 -22A voltage stability a

 9.3. Size:36K  international rectifier
 irhn9230.pdf

Provisional Data Sheet No. PD-9.1445 REPETITIVE AVALANCHE AND dv/dt RATED IRHN9230 HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.8 RAD HARD HEXFET Product Summary , International Rectifier s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiati