IRHN9230 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHN9230

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO276AB

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IRHN9230 datasheet

 ..1. Size:36K  international rectifier
 irhn9230.pdf pdf_icon

IRHN9230

Provisional Data Sheet No. PD-9.1445 REPETITIVE AVALANCHE AND dv/dt RATED IRHN9230 HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0.8 RAD HARD HEXFET Product Summary , International Rectifier s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiati

 8.1. Size:126K  international rectifier
 irhn9250.pdf pdf_icon

IRHN9230

PD - 91300B IRHN9250 RADIATION HARDENED JANSR2N7423U POWER MOSFET 200V, P-CHANNEL SURFACE MOUNT (SMD-1) REF MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9250 100K Rads (Si) 0.315 -14A JANSR2N7423U IRHN93250 300K Rads (Si) 0.315 -14A JANSF2N7423U SMD-1 International Rectifier s RADHard HEXFET

 8.2. Size:272K  international rectifier
 irhm9150 irhm9250 irhn9150 irhn9250.pdf pdf_icon

IRHN9230

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

 9.1. Size:128K  international rectifier
 irhn9150.pdf pdf_icon

IRHN9230

PD - 90885D IRHN9150 RADIATION HARDENED JANSR2N7422U POWER MOSFET 100V, P-CHANNEL SURFACE MOUNT (SMD-1) REF MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHN9150 100K Rads (Si) 0.080 -22A JANSR2N7422U IRHN93150 300K Rads (Si) 0.080 -22A JANSF2N7422U SMD-1 International Rectifier s RADHard HEXFET

MOSTRAR MÁS

Otros transistores... IRHN7230, IRHN7250, IRHN7250SE, IRHN7450, IRHN7450SE, IRHN7C50SE, IRHN9130, IRHN9150, K3569, IRHN9250, IRHM57064, IRHM57160, IRHM57260, IRHM57260SE, IRHM57264SE, IRHM57Z60, IRHM7054