IRHM57264SE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRHM57264SE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 125 nS
Cossⓘ - Capacitancia de salida: 780 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.066 Ohm
Paquete / Cubierta: TO254AA
Búsqueda de reemplazo de IRHM57264SE MOSFET
IRHM57264SE PDF Specs
irhm57264se.pdf
PD-93798B RADIATION HARDENED IRHM57264SE POWER MOSFET 250V, N-CHANNEL THRU-HOLE (TO-254AA) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHM57264SE 100K Rads (Si) 0.066 35A* TO-254 International Rectifier s R5TM technology provides Features high performance power MOSFETs for space n Low RDS(on) applications. These devices have been char... See More ⇒
irhm57260.pdf
PD - 91862D RADIATION HARDENED IRHM57260 POWER MOSFET 200V, N-CHANNEL TECHNOLOGY 4 4 THRU-HOLE (TO-254AA) # c Product Summary Part Number Radiation Level RDS(on) ID IRHM57260 100K Rads (Si) 0.049 35A* IRHM53260 300K Rads (Si) 0.049 35A* IRHM54260 600K Rads (Si) 0.049 35A* IRHM58260 1000K Rads (Si) 0.050 35A* TO-254AA Features International Rectifier s R5TM... See More ⇒
irhm57260se.pdf
PD - 93880C RADIATION HARDENED IRHM57260SE POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-254AA) TECHNOLOGY 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHM57260SE 100K Rads (Si) 0.049 35A* TO-254AA International Rectifier s R5TM technology provides Features high performance power MOSFETs for space n Single Event Effect (SEE) Hardened applications. T... See More ⇒
irhm57064.pdf
PD-93792E RADIATION HARDENED IRHM57064 POWER MOSFET 60V, N-CHANNEL TECHNOLOGY THRU-HOLE (TO-254AA) 5 5 Product Summary Part Number Radiation Level RDS(on) ID IRHM57064 100K Rads (Si) 0.012 35A* IRHM53064 300K Rads (Si) 0.012 35A* IRHM54064 600K Rads (Si) 0.012 35A* IRHM58064 1000K Rads (Si) 0.013 35A* TO-254AA International Rectifier s R5TM technology... See More ⇒
Otros transistores... IRHN9130 , IRHN9150 , IRHN9230 , IRHN9250 , IRHM57064 , IRHM57160 , IRHM57260 , IRHM57260SE , 13N50 , IRHM57Z60 , IRHM7054 , IRHM7064 , IRHM7130 , IRHM7150 , IRHM7160 , IRHM7230 , IRHM7250 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP6007S | AP5N50K | AP5N20K | AP5N10S | AP5N10M | AP50P20Q | AP50P20K | AP50P06K | AP50N06K | AP50N04QD | AP50N04Q | AP50N04K | AP50N04GD | AP5040QD | AP4946S | AP4847
Popular searches
j377 transistor datasheet | svt20240nt | tip41c replacement | b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement

