IRHM7160 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHM7160

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 35 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.045 Ohm

Empaquetado / Estuche: TO254AA

Búsqueda de reemplazo de MOSFET IRHM7160

IRHM7160 Datasheet (PDF)

1.1. irhm7064 irhm7160 irhm7260.pdf Size:255K _international_rectifier

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/663F shall be completed by 21 September 2013. 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433

1.2. irhm7160.pdf Size:266K _international_rectifier

PD - 91331C IRHM7160 IRHM7160 IRHM7160 IRHM7160 IRHM7160 JANSR2N7432 JANSR2N7432 JANSR2N7432 JANSR2N7432 JANSR2N7432 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF: MIL-PRF-1

4.1. irhm7130.pdf Size:485K _international_rectifier

PD - 90707D IRHM7130 IRHM7130 IRHM7130 RADIATION HARDENED IRHM7130 RADIATION HARDENED IRHM7130 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET ® RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TECHNOLOGY RAD Hard HEXFET TE

4.2. irhm7054 irhm7150 irhm7250 irhm7450.pdf Size:1035K _international_rectifier

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

4.3. irhm7150.pdf Size:444K _international_rectifier

PD - 90675C IRHM7150 IRHM7150 IRHM7150 IRHM7150 IRHM7150 JANSR2N7268 JANSR2N7268 JANSR2N7268 JANSR2N7268 JANSR2N7268 RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL 100V, N-CHANNEL POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET POWER MOSFET REF: MIL-PRF-1

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

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