IRHM7264SE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHM7264SE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 50 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO254AA

Búsqueda de reemplazo de MOSFET IRHM7264SE

IRHM7264SE Datasheet (PDF)

..1. Size:269K international rectifier
irhm7264se.pdf

PD - 91393EIRHM7264SEIRHM7264SEIRHM7264SEIRHM7264SEIRHM7264SEJANSR2N7434JANSR2N7434JANSR2N7434JANSR2N7434JANSR2N7434RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNEL250V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF:

..2. Size:384K international rectifier
irhm7264se irhm7360se irhm7460se.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND

7.1. Size:265K international rectifier
irhm7260.pdf

PD - 91332DIRHM7260IRHM7260IRHM7260IRHM7260IRHM7260 JANSR2N7433JANSR2N7433 JANSR2N7433 JANSR2N7433JANSR2N7433RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETREF: MIL-PR

7.2. Size:255K international rectifier
irhm7064 irhm7160 irhm7260.pdf

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/663F shall be completed by 21 September 2013. 21 June 2013 SUPERSEDING MIL-PRF-19500/663E 23 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433

8.1. Size:458K international rectifier
irhm7230.pdf

PD - 90713EIRHM7230IRHM7230IRHM7230RADIATION HARDENED IRHM7230RADIATION HARDENED IRHM7230RADIATION HARDENEDRADIATION HARDENEDRADIATION HARDENED200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNEL200V, N-CHANNELPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFETPOWER MOSFET RAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TECHNOLOGYRAD Hard HEXFET TE

8.2. Size:1035K international rectifier
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

8.3. Size:271K international rectifier
irhm7250.pdf

PD - 90674CIRHM7250RADIATION HARDENED JANSR2N7269POWER MOSFET 200V, N-CHANNELREF: MIL-PRF-19500/603THRU-HOLE (TO-254AA)RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM7250 100K Rads (Si) 0.10 26A JANSR2N7269 IRHM3250 300K Rads (Si) 0.10 26A JANSF2N7269 IRHM4250 600K Rads (Si) 0.10 26A JANSG2N7269 IRHM82

8.4. Size:140K international rectifier
irhm7250se.pdf

PD - 91779ARADIATION HARDENED IRHM7250SEPOWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHM7250SE 100K Rads (Si) 0.10 26ATO-254AAInternational Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsfor space applications. This technology has over a

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