IRHM7450 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHM7450

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm

Encapsulados: TO254AA

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IRHM7450 datasheet

 ..1. Size:1035K  international rectifier
 irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf pdf_icon

IRHM7450

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

 ..2. Size:311K  international rectifier
 irhm7450.pdf pdf_icon

IRHM7450

PD - 90673A IRHM7450 IRHM8450 REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270 HEXFET TRANSISTOR JANSH2N7270 N CHANNEL MEGA RAD HARD 500Volt, 0.45 , MEGA RAD HARD HEXFET Product Summary International Rectifier s RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage IRHM7450 500V 0.45 11A stability and breakdown v

 0.1. Size:138K  international rectifier
 irhm7450se.pdf pdf_icon

IRHM7450

PD - 91223D RADIATION HARDENED IRHM7450SE POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHM7450SE 100K Rads (Si) 0.51 12A TO-254AA International Rectifier s RADHardTM HEXFET MOSFET technology provides high performance power MOSFETs Features for space applications. This technology

 8.1. Size:384K  international rectifier
 irhm7264se irhm7360se irhm7460se.pdf pdf_icon

IRHM7450

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND

MOSTRAR MÁS

Otros transistores... IRHM7150, IRHM7160, IRHM7230, IRHM7250, IRHM7260, IRHM7264SE, IRHM7360, IRHM7360SE, TK10A60D, IRHM7450SE, IRHM7460SE, IRHM7Z60, IRHM9064, IRHM9130, IRHM9150, IRHM9160, IRHM9230