IRHM7450 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHM7450
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TO254AA

Búsqueda de reemplazo de MOSFET IRHM7450

IRHM7450 Datasheet (PDF)

..1. Size:1035K international rectifier
irhm7054 irhm7150 irhm7250 irhm7450 irhn7054 irhn7150 irhn7250 irhn7450.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/603J shall be completed by 20 June 2013. 6 May 2013 SUPERSEDING MIL-PRF-19500/603H 1 July 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269,

..2. Size:311K international rectifier
irhm7450.pdf

PD - 90673AIRHM7450IRHM8450REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7270HEXFET TRANSISTOR JANSH2N7270N CHANNELMEGA RAD HARD500Volt, 0.45, MEGA RAD HARD HEXFET Product SummaryInternational Rectifiers RAD HARD technology Part Number BVDSS RDS(on) IDHEXFETs demonstrate excellent threshold voltageIRHM7450 500V 0.45 11Astability and breakdown v

0.1. Size:138K international rectifier
irhm7450se.pdf

PD - 91223DRADIATION HARDENED IRHM7450SEPOWER MOSFET 500V, N-CHANNELTHRU-HOLE (TO-254AA) RAD Hard HEXFET TECHNOLOGYProduct Summary Part Number Radiation Level RDS(on) I D IRHM7450SE 100K Rads (Si) 0.51 12ATO-254AAInternational Rectifiers RADHardTM HEXFET MOSFETtechnology provides high performance power MOSFETsFeatures:for space applications. This technology

8.1. Size:384K international rectifier
irhm7264se irhm7360se irhm7460se.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/661E shall be completed by 25 May 2014. 25 February 2014 SUPERSEDING MIL-PRF-19500/661D 17 April 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED * TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND

8.2. Size:269K international rectifier
irhm7460se.pdf

PD - 91394EIRHM7460SEIRHM7460SEIRHM7460SEIRHM7460SEIRHM7460SEJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VJANSR2N7392 500VRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELRADIATION HARDENED N-CHANNELPOWER MOSFET REF: MIL-PRF-19500/661POWER MOSFET REF: MIL-PRF-19500/661POWER MOSF

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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