IRHM9250 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRHM9250  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.315 Ohm

Encapsulados: TO254AA

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IRHM9250 datasheet

 ..1. Size:117K  international rectifier
 irhm9250.pdf pdf_icon

IRHM9250

PD - 91299C IRHM9250 JANSR2N7423 RADIATION HARDENED 200V, P-CHANNEL POWER MOSFET REF MIL-PRF-19500/662 THRU-HOLE (T0-254AA) RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHM9250 100K Rads (Si) 0.315 -14A JANSR2N7423 IRHM93250 300K Rads (Si) 0.315 -14A JANSF2N7423 International Rectifier s RAD-Hard HEXFET technol-

 ..2. Size:272K  international rectifier
 irhm9150 irhm9250 irhn9150 irhn9250.pdf pdf_icon

IRHM9250

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/662F shall be completed by 9 August 2014. w/AMENDMENT 1 9 May 2014 SUPERSEDING MIL-PRF-19500/662F 10 December 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U

 8.1. Size:94K  international rectifier
 irhm9230.pdf pdf_icon

IRHM9250

Provisional Data Sheet No. PD-9.1395 I T TI T T T I T Product Summary -200 Volt, 0.8 RAD HARD HEXFET , International Rectifier s P-Channel RAD HARD technology Part Number BVDSS RDS(on) ID HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as IRHM9230 -200V 0.8 -6.5A high as 105 Rads (Si).

 8.2. Size:237K  international rectifier
 irhm9064 irhm9160 irhm9260.pdf pdf_icon

IRHM9250

The documentation and process conversion measures INCH-POUND necessary to comply with this document shall be MIL-PRF-19500/660E completed by 6 February 2014. 6 December 2013 SUPERSEDING MIL-PRF-19500/660D 11 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426

MOSTRAR MÁS

Otros transistores... IRHM7450SE, IRHM7460SE, IRHM7Z60, IRHM9064, IRHM9130, IRHM9150, IRHM9160, IRHM9230, 18N50, IRHM9260, IRHMB57064, IRHMB57260SE, IRHMB57Z60, IRHMJ57160, IRHMJ57260SE, IRHMJ7250, IRHMK57160