IRHMS597064 Todos los transistores

 

IRHMS597064 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRHMS597064
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO254AA
 

 Búsqueda de reemplazo de IRHMS597064 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IRHMS597064 Datasheet (PDF)

 ..1. Size:488K  international rectifier
 irhms597064 irhms597z60.pdf pdf_icon

IRHMS597064

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75

 6.1. Size:107K  international rectifier
 irhms597160.pdf pdf_icon

IRHMS597064

PD - 94283RADIATION HARDENED IRHMS597160POWER MOSFET100V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-254AA)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A*Low-OhmicTO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs f

 6.2. Size:248K  international rectifier
 irhms597160 irhms597260.pdf pdf_icon

IRHMS597064

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2,

 8.1. Size:270K  international rectifier
 irhms57064 irhms57160.pdf pdf_icon

IRHMS597064

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,

MOSTRAR MÁS

Otros transistores... IRHMK57260SE , IRHMK597160 , IRHMS57064 , IRHMS57160 , IRHMS57163SE , IRHMS57260SE , IRHMS57264SE , IRHMS57Z60 , MMIS60R580P , IRHMS597160 , IRHMS597260 , IRHMS597Z60 , IRHMS67160 , IRHMS67164 , IRHMS67260 , IRHMS67264 , IRH7054 .

History: FMI13N60E | DM10N65C-2 | 2N5640

 

 
Back to Top

 


 
.