IRHMS67164 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRHMS67164
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 208 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 170 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: TO254AA

Búsqueda de reemplazo de MOSFET IRHMS67164

IRHMS67164 Datasheet (PDF)

..1. Size:218K international rectifier
irhms67160 irhms67164 irhms67260 irhms67264.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this MIL-PRF-19500/753B revision shall be completed by 5 July 2013. 20 May 2013 SUPERSEDING MIL-PRF-19500/753A 19 May 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TY

9.1. Size:107K international rectifier
irhms597160.pdf

PD - 94283RADIATION HARDENED IRHMS597160POWER MOSFET100V, P-CHANNELTHRU-HOLE (Low-Ohmic TO-254AA)TECHNOLOGY44# cProduct Summary Part Number Radiation Level RDS(on) ID IRHMS597160 100K Rads (Si) 0.049 -45A* IRHMS593160 300K Rads (Si) 0.049 -45A*Low-OhmicTO-254AAInternational Rectifiers R5TM technology providesFeatures:high performance power MOSFETs f

9.2. Size:488K international rectifier
irhms597064 irhms597z60.pdf

The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 18 June 2014. MIL-PRF-19500/733C 18 April 2014 SUPERSEDING MIL-PRF-19500/733B 10 September 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N75

9.3. Size:270K international rectifier
irhms57064 irhms57160.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/698F shall be completed by 13 June 2015. 13 March 2015 SUPERSEDING MIL-PRF-19500/698E 20 May 2013 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR,

9.4. Size:334K international rectifier
irhms57163se irhms57260se irhms57264se.pdf

The documentation and process conversion INCH-POUND measures necessary to comply with this revision MIL-PRF-19500/685G shall be completed by 16 January 2015. 16 October 2014 SUPERSEDING MIL-PRF-19500/685F 6 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JAN

9.5. Size:248K international rectifier
irhms597160 irhms597260.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/713C completed by 18 February 2014. 18 December 2013 SUPERSEDING MIL-PRF-19500/713B 9 November 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2,

9.6. Size:245K international rectifier
irhms57z60.pdf

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MIL-PRF-19500/697F shall be completed by 11 June 2015. 11 March 2015 SUPERSEDING MIL-PRF-19500/697E 15 May 2013 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: