IRFM210BTFFP001 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFM210BTFFP001
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 0.77 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 30 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
Encapsulados: SOT223
Búsqueda de reemplazo de IRFM210BTFFP001 MOSFET
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IRFM210BTFFP001 datasheet
irfm210btf fp001.pdf
November 2001 IRFM210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.77A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fas
irfm210a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.77 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 1.169 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va
irfm214a.pdf
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.64 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Lower RDS(ON) 1.393 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic
Otros transistores... IRH7450SE, IRH9130, IRH9150, IRH9230, IRH9250, IRFM064, IRFM120ATF, IRFM1310ST, IRF540N, IRFM220BTFFP001, IRFM250D, IRFM254, IRFM260, IRFM3205, IRFM450, IRFM5210, IRFM540
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