IRFM254 Todos los transistores

 ..1. Size:60K  njs
 irfm254.pdf

 8.1. Size:163K  international rectifier
 irfm250.pdf

PD - 90554E IRFM250 JANTX2N7225 JANTXV2N7225 POWER MOSFET REF MIL-PRF-19500/592 THRU-HOLE (TO-254AA) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM250 0.100 27.4A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re-

 8.2. Size:41K  semelab
 irfm250d.pdf

IRFM250D MECHANICAL DATA N CHANNEL Dimensions in mm (inches) POWER MOSFET VDSS 200V ID(cont) 27.4A RDS(on) 0.100 FEATURES N CHANNEL MOSFET

 9.1. Size:184K  international rectifier
 irfm260.pdf

PD - 91388C IRFM260 POWER MOSFET 200V, N-CHANNEL THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM260 0.060 35A* HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on- state resistance combined with high transconductance. TO-254

 9.2. Size:182K  international rectifier
 irfm240.pdf

PD - 90555D IRFM240 JANTX2N7219 JANTXV2N7219 POWER MOSFET REF MIL-PRF-19500/596 THRU-HOLE (TO-254AA) 200V, N-CHANNEL Product Summary HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM240 0.18 18A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- si

 9.3. Size:703K  fairchild semi
 irfm210btf fp001.pdf

November 2001 IRFM210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.77A, 200V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fas

 9.4. Size:726K  fairchild semi
 irfm220btf fp001.pdf

November 2001 IRFM220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to Fast

 9.5. Size:957K  samsung
 irfm220a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 0.626 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 9.6. Size:973K  samsung
 irfm214a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.64 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Lower RDS(ON) 1.393 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

 9.7. Size:949K  samsung
 irfm210a.pdf

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.77 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V 2 Low RDS(ON) 1.169 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va

 9.8. Size:966K  samsung
 irfm224a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V 2 Low RDS(ON) 0.742 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va