IRFM260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFM260
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 120 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO254AA
Búsqueda de reemplazo de MOSFET IRFM260
IRFM260 Datasheet (PDF)
irfm260.pdf
PD - 91388CIRFM260POWER MOSFET 200V, N-CHANNELTHRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFM260 0.060 35A*HEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-state resistance combined with high transconductance. TO-254
irfm240.pdf
PD - 90555DIRFM240JANTX2N7219JANTXV2N7219POWER MOSFETREF:MIL-PRF-19500/596THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM240 0.18 18AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-si
irfm250.pdf
PD - 90554EIRFM250JANTX2N7225JANTXV2N7225POWER MOSFETREF:MIL-PRF-19500/592THRU-HOLE (TO-254AA) 200V, N-CHANNELProduct SummaryHEXFET MOSFET TECHNOLOGYPart Number RDS(on) IDIRFM250 0.100 27.4AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state re-
irfm210btf fp001.pdf
November 2001IRFM210B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.77A, 200V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.2 nC)planar, DMOS technology. Low Crss ( typical 6.8 pF)This advanced technology has been especially tailored to Fas
irfm220btf fp001.pdf
November 2001IRFM220B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.13A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to Fast
irfm220a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 0.626 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfm214a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.64 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Lower RDS(ON) : 1.393 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
irfm210a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.77 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V2 Low RDS(ON) : 1.169 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfm224a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 1.1 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.92 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V2 Low RDS(ON) : 0.742 (Typ.)131. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irfm250d.pdf
IRFM250DMECHANICAL DATANCHANNELDimensions in mm (inches)POWER MOSFETVDSS 200VID(cont) 27.4A RDS(on) 0.100 FEATURES NCHANNEL MOSFET
Otros transistores... IRH9250 , IRFM064 , IRFM120ATF , IRFM1310ST , IRFM210BTFFP001 , IRFM220BTFFP001 , IRFM250D , IRFM254 , IRF540N , IRFM3205 , IRFM450 , IRFM5210 , IRFM540 , IRFMA450 , IRFMG40 , IRFMG50 , IRFMJ044 .
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